Integrated module of acoustic wave device with active thermal compensation and an active thermal compensating method thereof

ABSTRACT

An integrated module of acoustic wave device with active thermal compensation comprises a substrate, an acoustic wave filter, an active adjustment circuit and at least one variable capacitance device. The acoustic wave filter comprises a plurality of series acoustic wave resonators formed on the substrate, at least one shunt acoustic wave resonator formed on the substrate and a thermal sensing acoustic wave resonator. Each of the variable capacitance device is connected in parallel to one of the series and shunt acoustic wave resonators. The active adjustment circuit outputs an active thermal compensation signal correlated to a thermal variation sensed by the thermal sensing acoustic wave resonator to the variable capacitance device. The active thermal compensation signal induces a capacitance variation of the variable capacitance device such that the impact of the thermal variation to the acoustic wave device is compensated.

CROSS-REFERENCE TO RELATED DOCUMENTS

This patent application claims priority from and is related to U.S.Provisional Patent Application Ser. No. 62/356,227, filed 29 Jun. 2016.

FIELD OF THE INVENTION

The present invention is related to an integrated module of acousticwave device with active thermal compensation, especially an integratedmodule of acoustic wave device having thermal sensing acoustic waveresonator.

BACKGROUND OF THE INVENTION

Please refer to FIG. 6A, which is the sectional schematic view of asurface acoustic wave resonator of conventional technology. A surfaceacoustic wave resonator 60 comprises two interlocking comb-shapedelectrodes 611, 612 of an interdigital transducer 610 and two gratingreflectors 613, 614. The two interlocking comb-shaped electrodes 611,612 of the interdigital transducer 610 and the two grating reflectors613, 614 are formed on a piezoelectric substrate. The two gratingreflectors 613, 614 are formed respectively at two sides of the twointerlocking comb-shaped electrodes 611, 612 of the interdigitaltransducer 610. However, the interdigital transducer 610 of the surfaceacoustic wave resonator 60 is sensitive to thermal variation. A thermalvariation will cause a variation of the resonance frequency of thesurface acoustic wave resonator 60. Also a thermal variation will causea variation of an equivalent parallel capacitance of the interdigitaltransducer 610 of the surface acoustic wave resonator 60. Please alsorefer to FIG. 6B, which is the sectional schematic view of an acousticwave resonance structure of a bulk acoustic wave resonator ofconventional technology. In conventional technology, a bulk acousticwave resonator (BAW) or a thin film bulk acoustic wave resonator (FBAR)has an acoustic wave resonance structure 64. The acoustic wave resonancestructure 64 comprises a bottom electrode 61, a piezoelectric layer 62and a top electrode 63. The piezoelectric layer 62 is formed on thebottom electrode 61. The top electrode 63 is formed on the piezoelectriclayer 62. However, the acoustic wave resonance structure 64 of the bulkacoustic wave resonator (or the thin film bulk acoustic wave resonator)is sensitive to thermal variation. A thermal variation will cause avariation of the resonance frequency of the acoustic wave resonancestructure 64 of the bulk acoustic wave resonator (or the thin film bulkacoustic wave resonator). Also a thermal variation will cause avariation of an equivalent parallel capacitance of the acoustic waveresonance structure 64 of the bulk acoustic wave resonator (or the thinfilm bulk acoustic wave resonator). Therefore, a thermal sensor and anactive thermal compensating circuit are needed for the surface acousticwave resonator 60 (SAW), the bulk acoustic wave resonator (BAW) and thethin film bulk acoustic wave resonator (FBAR). And also a thermalcompensation method is needed.

Please refer to FIG. 6C, which is the sectional schematic view of athermal sensitive resistance sensor of conventional technology. Athermal sensitive resistance sensor 65 has a meandered-shape. Inconventional technology, the thermal sensitive resistance sensor 65 ispositioned near the surface acoustic wave resonator 60, the bulkacoustic wave resonator or the thin film bulk acoustic wave resonatorfor sensing a thermal variation. However, it costs further effort toform a thermal sensor near the acoustic wave resonator.

A conventional buck DC-DC converter circuit is usually used for steppingdown voltage from its input to its output. A conventional boost DC-DCconverter circuit is usually used for stepping up voltage from its inputto its output. But no one has applied the conventional buck DC-DCconverter circuit or the conventional boost DC-DC converter circuit as athermal sensor circuit, especially a thermal sensor circuit for athermal sensor which senses a thermal variation correlated to acapacitance variation of the thermal sensor.

Accordingly, the present invention has developed a new design which mayavoid the above mentioned drawbacks, may significantly enhance theperformance of the devices and may take into account economicconsiderations. Therefore, the present invention then has been invented.

SUMMARY OF THE INVENTION

Since the interdigital transducer of the surface acoustic wave resonatoris sensitive to thermal variation. A thermal variation will cause avariation of the resonance frequency of the surface acoustic waveresonator. Also a thermal variation will cause a variation of anequivalent parallel capacitance of the interdigital transducer of thesurface acoustic wave resonator. Therefore, the present inventionprovides a thermal sensing acoustic wave resonator (which is a surfaceacoustic wave resonator) as a thermal sensor. The interdigitaltransducer of the thermal sensing acoustic wave resonator can play arole of acoustic wave filtering, at the same time, and a role of thermalsensing. The interdigital transducer of the thermal sensing acousticwave resonator senses a thermal variation correlated to a variation ofan equivalent parallel capacitance of the interdigital transducer of thethermal sensing acoustic wave resonator or a variation of the resonancefrequency of the thermal sensing acoustic wave resonator.

Furthermore, since the acoustic wave resonance structure of the bulkacoustic wave resonator (or the thin film bulk acoustic wave resonator)is sensitive to thermal variation. A thermal variation will cause avariation of the resonance frequency of the acoustic wave resonancestructure of the bulk acoustic wave resonator (or the thin film bulkacoustic wave resonator). Also a thermal variation will cause avariation of an equivalent parallel capacitance of the acoustic waveresonance structure of the bulk acoustic wave resonator (or the thinfilm bulk acoustic wave resonator). Therefore, the present inventionprovides a thermal sensing acoustic wave resonator (which is a bulkacoustic wave resonator or a thin film bulk acoustic wave resonator) asa thermal sensor. The acoustic wave resonance structure of the thermalsensing acoustic wave resonator can play a role of acoustic wavefiltering, at the same time, and a role of thermal sensing. The acousticwave resonance structure of the thermal sensing acoustic wave resonatorsenses a thermal variation correlated to a variation of an equivalentparallel capacitance of the acoustic wave resonance structure of thethermal sensing acoustic wave resonator or a variation of the resonancefrequency of the thermal sensing acoustic wave resonator.

Moreover, the present invention provides a thermal sensing acoustic waveresonator which is a surface acoustic wave resonator with a new designof a reflector. The reflector of the thermal sensing acoustic waveresonator is a meandered-shaped reflector. The meandered-shapedreflector has the same function of the conventional grating reflector.And the meandered-shaped reflector can be used as a thermal sensitiveresistance sensor. Therefore, the meandered-shaped reflector of thethermal sensing acoustic wave resonator can play a role of thermalsensing. On the other hand, the interdigital transducer of the thermalsensing acoustic wave resonator can play a role of acoustic wavefiltering. Hence, the thermal sensing acoustic wave resonator can playdual roles of thermal sensing and acoustic wave filtering.

The present invention further provides an integrated module of acousticwave device with active thermal compensation. The integrated module ofacoustic wave device with active thermal compensation comprises a firstsubstrate, a first acoustic wave filter, a first active adjustmentcircuit and at least one first variable capacitance device. The firstacoustic wave filter comprises a plurality of first acoustic waveresonators, at least one second acoustic wave resonator and a firstthermal sensing acoustic wave resonator. The plurality of first acousticwave resonators is formed on the first substrate. Each of the pluralityof first acoustic wave resonators is a series acoustic wave resonator ofthe first acoustic wave filter. The at least one second acoustic waveresonator is formed on the first substrate. Each of the at least onesecond acoustic wave resonator is a shunt acoustic wave resonator of thefirst acoustic wave filter. The first thermal sensing acoustic waveresonator is for sensing a first thermal variation. The first thermalsensing acoustic wave resonator is connected to the first activeadjustment circuit. Each of the at least one first variable capacitancedevice is connected in parallel to one of the plurality of firstacoustic wave resonators and the at least one second acoustic waveresonator of the first acoustic wave filter. Each of the at least onefirst variable capacitance device is connected to the first activeadjustment circuit for receiving a first active thermal compensatingsignal. The first active thermal compensating signal is correlated tothe first thermal variation. The first active thermal compensatingsignal induces a first capacitance variation of each of the at least onefirst variable capacitance device such that the first capacitancevariation of each of the at least one first variable capacitance devicecompensates the impact of the first thermal variation to the firstacoustic wave filter of the acoustic wave device.

In an embodiment, the first thermal sensing acoustic wave resonator isformed on the first substrate. The first thermal sensing acoustic waveresonator is one of a series acoustic wave resonator of the firstacoustic wave filter and a shunt acoustic wave resonator of the firstacoustic wave filter, thereby the first thermal sensing acoustic waveresonator plays dual roles of thermal sensing and acoustic wavefiltering.

In an embodiment, the plurality of first acoustic wave resonators, theat least one second acoustic wave resonator and the first thermalsensing acoustic wave resonator are surface acoustic wave resonators(SAW). The first thermal sensing acoustic wave resonator comprises tworeflectors and two interlocking comb-shaped electrodes of aninterdigital transducer. The two reflectors and the two interlockingcomb-shaped electrodes of the interdigital transducer are formed on thefirst substrate. The two reflectors are formed respectively at two sidesof the two interlocking comb-shaped electrodes of the interdigitaltransducer. At least one of the two reflectors is a meandered-shapedreflector. The first thermal variation is correlated to a resistancevariation of the meandered-shaped reflector.

In an embodiment, the plurality of first acoustic wave resonators, theat least one second acoustic wave resonator and the first thermalsensing acoustic wave resonator are bulk acoustic wave resonators (BAW)or thin film bulk acoustic wave resonators (FBAR). The first thermalvariation is correlated to at least one of a capacitance variation and aresonance frequency variation of the first thermal sensing acoustic waveresonator.

In an embodiment, the first thermal sensing acoustic wave resonatorcomprises a top electrode, a bottom electrode and a piezoelectric layer.The bottom electrode is formed on the first substrate, the piezoelectriclayer is formed on the bottom electrode, the top electrode is formed onthe piezoelectric layer. The material of the piezoelectric layer is atleast one material selected from the group consisting of AlN, quartz,monocrystalline SiO₂, ZnO, HfO₂, barium strontium titanate (BST) andlead zirconate titanate (PZT).

In an embodiment, the plurality of first acoustic wave resonators, theat least one second acoustic wave resonator and the first thermalsensing acoustic wave resonator are surface acoustic wave resonators.The first thermal sensing acoustic wave resonator comprises twointerlocking comb-shaped electrodes of an interdigital transducer. Thetwo interlocking comb-shaped electrodes of the interdigital transduceris formed on the first substrate. The first thermal variation iscorrelated to at least one of a capacitance variation and a resonancefrequency variation of the first thermal sensing acoustic waveresonator.

In an embodiment, the material of the first substrate is one materialselected from the group consisting of glass, LiTaO₃, LiNbO₃, quartz, Si,GaAs, GaP, sapphire, Al₂O₃, InP, SiC, diamond, GaN and AlN.

In an embodiment, the first thermal sensing acoustic wave resonator isformed on the first substrate. The first thermal sensing acoustic waveresonator is one selected from the group consisting of a bulk acousticwave resonator, a thin film bulk acoustic wave resonator and a surfaceacoustic wave resonator. The first thermal variation is correlated to atleast one of a capacitance variation and a resonance frequency variationof the first thermal sensing acoustic wave resonator.

In an embodiment, the first thermal sensing acoustic wave resonator isone selected from the group consisting of a bulk acoustic wave resonatorand a thin film bulk acoustic wave resonator. The first thermal sensingacoustic wave resonator comprises a top electrode, a bottom electrodeand a piezoelectric layer. The bottom electrode is formed on the firstsubstrate, the piezoelectric layer is formed on the bottom electrode,the top electrode is formed on the piezoelectric layer. The material ofthe piezoelectric layer is at least one material selected from the groupconsisting of AlN, quartz, monocrystalline SiO₂, ZnO, HfO₂, bariumstrontium titanate and lead zirconate titanate.

In an embodiment, the first thermal sensing acoustic wave resonator isformed on a second substrate.

In an embodiment, the first substrate and the second substrate arestacked with each other.

In an embodiment, the first thermal sensing acoustic wave resonator isone selected from the group consisting of a bulk acoustic wave resonatorand a thin film bulk acoustic wave resonator. The first thermalvariation is correlated to at least one of a capacitance variation and aresonance frequency variation of the first thermal sensing acoustic waveresonator.

In an embodiment, the first thermal sensing acoustic wave resonatorcomprises a top electrode, a bottom electrode and a piezoelectric layer.The bottom electrode is formed on the second substrate, thepiezoelectric layer is formed on the bottom electrode, the top electrodeis formed on the piezoelectric layer. The material of the piezoelectriclayer is at least one material selected from the group consisting ofAlN, quartz, monocrystalline SiO₂, ZnO, HfO₂, barium strontium titanateand lead zirconate titanate.

In an embodiment, the first thermal sensing acoustic wave resonator is asurface acoustic wave resonator. The first thermal sensing acoustic waveresonator comprises two interlocking comb-shaped electrodes of aninterdigital transducer. The two interlocking comb-shaped electrodes ofthe interdigital transducer is formed on the second substrate. The firstthermal variation is correlated to at least one of a capacitancevariation and a resonance frequency variation of the first thermalsensing acoustic wave resonator.

In an embodiment, the plurality of first acoustic wave resonators, theat least one second acoustic wave resonator and the first thermalsensing acoustic wave resonator are surface acoustic wave resonators.The first thermal sensing acoustic wave resonator comprises tworeflectors and two interlocking comb-shaped electrodes of aninterdigital transducer. The two reflectors and the two interlockingcomb-shaped electrodes of the interdigital transducer are formed on thesecond substrate. The two reflectors are formed respectively at twosides of the two interlocking comb-shaped electrodes of the interdigitaltransducer. At least one of the two reflectors is a meandered-shapedreflector. The first thermal variation is correlated to a resistancevariation of the meandered-shaped reflector.

In an embodiment, the material of the second substrate is one materialselected from the group consisting of glass, LiTaO₃, LiNbO₃, quartz, Si,GaAs, GaP, sapphire, Al₂O₃, InP, SiC, diamond, GaN and AlN.

In an embodiment, the first active adjustment circuit and the at leastone first variable capacitance device are formed on a circuit substrate.

In an embodiment, further comprising a second acoustic wave filter. Oneof the first acoustic wave filter and the second acoustic wave filterforms a transmitter acoustic wave filter of an acoustic wave duplexer,while the other forms a receiver acoustic wave filter of the acousticwave duplexer.

In an embodiment, further comprising a second active adjustment circuitand at least one second variable capacitance device. The second acousticwave filter comprises a plurality of third acoustic wave resonators, atleast one fourth acoustic wave resonator and a second thermal sensingacoustic wave resonator. The second thermal sensing acoustic waveresonator senses a second thermal variation. The plurality of thirdacoustic wave resonators and the at least one fourth acoustic waveresonator are formed on the first substrate. Each of the plurality ofthird acoustic wave resonators is a series acoustic wave resonator ofthe second acoustic wave filter. Each of the at least one fourthacoustic wave resonator is a shunt acoustic wave resonator of the secondacoustic wave filter. The second thermal sensing acoustic wave resonatoris connected to the second active adjustment circuit. Each of the atleast one second variable capacitance device is connected in parallel toone of the plurality of third acoustic wave resonators and the at leastone fourth acoustic wave resonator of the second acoustic wave filter.Each of the at least one second variable capacitance device is connectedto the second active adjustment circuit for receiving a second activethermal compensating signal. The second active thermal compensatingsignal is correlated to the second thermal variation. The second activethermal compensating signal induces a second capacitance variation ofeach of the at least one second variable capacitance device such thatthe second capacitance variation of each of the at least one secondvariable capacitance device compensates the impact of the second thermalvariation to the second acoustic wave filter of the acoustic wavedevice.

In an embodiment, the second thermal sensing acoustic wave resonator isformed on the first substrate. The second thermal sensing acoustic waveresonator is one of a series acoustic wave resonator of the secondacoustic wave filter and a shunt acoustic wave resonator of the secondacoustic wave filter, thereby the second thermal sensing acoustic waveresonator plays dual roles of thermal sensing and acoustic wavefiltering.

In an embodiment, each of the at least one second variable capacitancedevice is a varactor.

In an embodiment, further comprising at least one second variablecapacitance device, wherein the second acoustic wave filter comprises aplurality of third acoustic wave resonators and at least one fourthacoustic wave resonator. The plurality of third acoustic wave resonatorsand the at least one fourth acoustic wave resonator are formed on thefirst substrate. Each of the plurality of third acoustic wave resonatorsis a series acoustic wave resonator of the second acoustic wave filter.Each of the at least one fourth acoustic wave resonator is a shuntacoustic wave resonator of the second acoustic wave filter. Each of theat least one second variable capacitance device is connected in parallelto one of the plurality of third acoustic wave resonators and the atleast one fourth acoustic wave resonator of the second acoustic wavefilter. Each of the at least one second variable capacitance device isconnected to the first active adjustment circuit for receiving the firstactive thermal compensating signal. The first active thermalcompensating signal is correlated to the first thermal variation. Thefirst active thermal compensating signal induces a second capacitancevariation of each of the at least one second variable capacitance devicesuch that the second capacitance variation of each of the at least onesecond variable capacitance device compensates the impact of the firstthermal variation to the second acoustic wave filter of the acousticwave device.

In an embodiment, each of the at least one second variable capacitancedevice is a varactor.

In an embodiment, further comprising a power amplifier and a low noiseamplifier. The power amplifier is connected to the transmitter acousticwave filter of the acoustic wave duplexer, while the low noise amplifieris connected to the receiver acoustic wave filter of the acoustic waveduplexer.

In an embodiment, the power amplifier and the low noise amplifier areformed on an amplifier substrate.

In an embodiment, the power amplifier, the low noise amplifier, thefirst active adjustment circuit and the at least one first variablecapacitance device are formed on a circuit substrate.

In an embodiment, the second active adjustment circuit and the at leastone second variable capacitance device are formed on the circuitsubstrate.

In an embodiment, the acoustic wave duplexer, the power amplifier, thelow noise amplifier, the first active adjustment circuit and the atleast one first variable capacitance device are formed on the firstsubstrate.

In an embodiment, the second active adjustment circuit and the at leastone second variable capacitance device are formed on the firstsubstrate.

In an embodiment, further comprising an antenna. The antenna isconnected to the acoustic wave duplexer.

In an embodiment, the first acoustic wave filter, the first activeadjustment circuit and the at least one first variable capacitancedevice are formed on the first substrate.

In an embodiment, each of the at least one first variable capacitancedevice is a varactor.

The present invention further provides an active thermal compensatingmethod for an integrated module of acoustic wave device with activethermal compensation. The acoustic wave device comprises a firstacoustic wave filter. The first acoustic wave filter comprises aplurality of first acoustic wave resonators, at least one secondacoustic wave resonator and a first thermal sensing acoustic waveresonator. The plurality of first acoustic wave resonators and the atleast one second acoustic wave resonator are formed on a firstsubstrate. Each of the plurality of first acoustic wave resonators is aseries acoustic wave resonator of the first acoustic wave filter. Eachof the at least one second acoustic wave resonator is a shunt acousticwave resonator of the first acoustic wave filter. The active thermalcompensating method comprises following steps of: sensing a firstthermal variation by the first thermal sensing acoustic wave resonator;and outputting a first active thermal compensating signal to at leastone first variable capacitance device by a first active adjustmentcircuit. The first thermal sensing acoustic wave resonator is connectedto the first active adjustment circuit. Each of the at least one firstvariable capacitance device is connected to the first active adjustmentcircuit. The first active thermal compensating signal is correlated tothe first thermal variation. Each of the at least one first variablecapacitance device is connected in parallel to one of the plurality offirst acoustic wave resonators and the at least one second acoustic waveresonator of the first acoustic wave filter. The first active thermalcompensating signal induces a first capacitance variation of each of theat least one first variable capacitance device such that the firstcapacitance variation of each of the at least one first variablecapacitance device compensates the impact of the first thermal variationto the first acoustic wave filter of the acoustic wave device.

In an embodiment, the first thermal sensing acoustic wave resonator isformed on the first substrate. The first thermal sensing acoustic waveresonator is one of a series acoustic wave resonator of the firstacoustic wave filter and a shunt acoustic wave resonator of the firstacoustic wave filter, thereby the first thermal sensing acoustic waveresonator plays dual roles of thermal sensing and acoustic wavefiltering.

In an embodiment, the plurality of first acoustic wave resonators, theat least one second acoustic wave resonator and the first thermalsensing acoustic wave resonator are surface acoustic wave resonators.The first thermal sensing acoustic wave resonator comprises tworeflectors and two interlocking comb-shaped electrodes of aninterdigital transducer. The two reflectors and the two interlockingcomb-shaped electrodes of the interdigital transducer are formed on thefirst substrate. The two reflectors are formed respectively at two sidesof the two interlocking comb-shaped electrodes of the interdigitaltransducer. At least one of the two reflectors is a meandered-shapedreflector. The first thermal variation is correlated to a resistancevariation of the meandered-shaped reflector.

In an embodiment, the plurality of first acoustic wave resonators, theat least one second acoustic wave resonator and the first thermalsensing acoustic wave resonator are bulk acoustic wave resonators orthin film bulk acoustic wave resonators. The first thermal variation iscorrelated to at least one of a capacitance variation and a resonancefrequency variation of the first thermal sensing acoustic waveresonator.

In an embodiment, the first thermal sensing acoustic wave resonatorcomprises a top electrode, a bottom electrode and a piezoelectric layer.The bottom electrode is formed on the first substrate, the piezoelectriclayer is formed on the bottom electrode, the top electrode is formed onthe piezoelectric layer. The material of the piezoelectric layer is atleast one material selected from the group consisting of AlN, quartz,monocrystalline SiO₂, ZnO, HfO₂, barium strontium titanate and leadzirconate titanate.

In an embodiment, the plurality of first acoustic wave resonators, theat least one second acoustic wave resonator and the first thermalsensing acoustic wave resonator are surface acoustic wave resonators.The first thermal sensing acoustic wave resonator comprises twointerlocking comb-shaped electrodes of an interdigital transducer. Thetwo interlocking comb-shaped electrodes of the interdigital transduceris formed on the first substrate. The first thermal variation iscorrelated to at least one of a capacitance variation and a resonancefrequency variation of the first thermal sensing acoustic waveresonator.

In an embodiment, the material of the first substrate is one materialselected from the group consisting of glass, LiTaO₃, LiNbO₃, quartz, Si,GaAs, GaP, sapphire, Al₂O₃, InP, SiC, diamond, GaN and AlN.

In an embodiment, the first thermal sensing acoustic wave resonator isformed on the first substrate. The first thermal sensing acoustic waveresonator is one selected from the group consisting of a bulk acousticwave resonator, a thin film bulk acoustic wave resonator and a surfaceacoustic wave resonator. The first thermal variation is correlated to atleast one of a capacitance variation and a resonance frequency variationof the first thermal sensing acoustic wave resonator.

In an embodiment, the first thermal sensing acoustic wave resonator isone selected from the group consisting of a bulk acoustic wave resonatorand a thin film bulk acoustic wave resonator. The first thermal sensingacoustic wave resonator comprises a top electrode, a bottom electrodeand a piezoelectric layer. The bottom electrode is formed on the firstsubstrate, the piezoelectric layer is formed on the bottom electrode,the top electrode is formed on the piezoelectric layer. The material ofthe piezoelectric layer is at least one material selected from the groupconsisting of AlN, quartz, monocrystalline SiO₂, ZnO, HfO₂, bariumstrontium titanate and lead zirconate titanate.

In an embodiment, the first thermal sensing acoustic wave resonator isformed on a second substrate.

In an embodiment, the first substrate and the second substrate arestacked with each other.

In an embodiment, the first thermal sensing acoustic wave resonator isone selected from the group consisting of a bulk acoustic wave resonatorand a thin film bulk acoustic wave resonator. The first thermalvariation is correlated to at least one of a capacitance variation and aresonance frequency variation of the first thermal sensing acoustic waveresonator.

In an embodiment, the first thermal sensing acoustic wave resonatorcomprises a top electrode, a bottom electrode and a piezoelectric layer.The bottom electrode is formed on the second substrate, thepiezoelectric layer is formed on the bottom electrode, the top electrodeis formed on the piezoelectric layer. The material of the piezoelectriclayer is at least one material selected from the group consisting ofAlN, quartz, monocrystalline SiO₂, ZnO, HfO₂, barium strontium titanateand lead zirconate titanate.

In an embodiment, the first thermal sensing acoustic wave resonator is asurface acoustic wave resonator. The first thermal sensing acoustic waveresonator comprises two interlocking comb-shaped electrodes of aninterdigital transducer. The two interlocking comb-shaped electrodes ofthe interdigital transducer is formed on the second substrate. The firstthermal variation is correlated to at least one of a capacitancevariation and a resonance frequency variation of the first thermalsensing acoustic wave resonator.

In an embodiment, the plurality of first acoustic wave resonators, theat least one second acoustic wave resonator and the first thermalsensing acoustic wave resonator are surface acoustic wave resonators.The first thermal sensing acoustic wave resonator comprises tworeflectors and two interlocking comb-shaped electrodes of aninterdigital transducer. The two reflectors and the two interlockingcomb-shaped electrodes of the interdigital transducer are formed on thesecond substrate. The two reflectors are formed respectively at twosides of the two interlocking comb-shaped electrodes of the interdigitaltransducer. At least one of the two reflectors is a meandered-shapedreflector. The first thermal variation is correlated to a resistancevariation of the meandered-shaped reflector.

In an embodiment, the material of the second substrate is one materialselected from the group consisting of glass, LiTaO₃, LiNbO₃, quartz, Si,GaAs, GaP, sapphire, Al₂O₃, InP, SiC, diamond, GaN and AlN.

In an embodiment, the first active adjustment circuit and the at leastone first variable capacitance device are formed on a circuit substrate.

In an embodiment, further comprising a second acoustic wave filter. Oneof the first acoustic wave filter and the second acoustic wave filterforms a transmitter acoustic wave filter of an acoustic wave duplexer,while the other forms a receiver acoustic wave filter of the acousticwave duplexer.

In an embodiment, further comprising a second active adjustment circuitand at least one second variable capacitance device. The second acousticwave filter comprises a plurality of third acoustic wave resonators, atleast one fourth acoustic wave resonator and a second thermal sensingacoustic wave resonator. The second thermal sensing acoustic waveresonator senses a second thermal variation. The plurality of thirdacoustic wave resonators and the at least one fourth acoustic waveresonator are formed on the first substrate. Each of the plurality ofthird acoustic wave resonators is a series acoustic wave resonator ofthe second acoustic wave filter. Each of the at least one fourthacoustic wave resonator is a shunt acoustic wave resonator of the secondacoustic wave filter. The second thermal sensing acoustic wave resonatoris connected to the second active adjustment circuit. Each of the atleast one second variable capacitance device is connected in parallel toone of the plurality of third acoustic wave resonators and the at leastone fourth acoustic wave resonator of the second acoustic wave filter.Each of the at least one second variable capacitance device is connectedto the second active adjustment circuit for receiving a second activethermal compensating signal. The second active thermal compensatingsignal is correlated to the second thermal variation. The second activethermal compensating signal induces a second capacitance variation ofeach of the at least one second variable capacitance device such thatthe second capacitance variation of each of the at least one secondvariable capacitance device compensates the impact of the second thermalvariation to the second acoustic wave filter of the acoustic wavedevice.

In an embodiment, the second thermal sensing acoustic wave resonator isformed on the first substrate. The second thermal sensing acoustic waveresonator is one of a series acoustic wave resonator of the secondacoustic wave filter and a shunt acoustic wave resonator of the secondacoustic wave filter, thereby the second thermal sensing acoustic waveresonator plays dual roles of thermal sensing and acoustic wavefiltering.

In an embodiment, each of the at least one second variable capacitancedevice is a varactor.

In an embodiment, further comprising at least one second variablecapacitance device, wherein the second acoustic wave filter comprises aplurality of third acoustic wave resonators and at least one fourthacoustic wave resonator. The plurality of third acoustic wave resonatorsand the at least one fourth acoustic wave resonator are formed on thefirst substrate. Each of the plurality of third acoustic wave resonatorsis a series acoustic wave resonator of the second acoustic wave filter.Each of the at least one fourth acoustic wave resonator is a shuntacoustic wave resonator of the second acoustic wave filter. Each of theat least one second variable capacitance device is connected in parallelto one of the plurality of third acoustic wave resonators and the atleast one fourth acoustic wave resonator of the second acoustic wavefilter. Each of the at least one second variable capacitance device isconnected to the first active adjustment circuit for receiving the firstactive thermal compensating signal. The first active thermalcompensating signal is correlated to the first thermal variation. Thefirst active thermal compensating signal induces a second capacitancevariation of each of the at least one second variable capacitance devicesuch that the second capacitance variation of each of the at least onesecond variable capacitance device compensates the impact of the firstthermal variation to the second acoustic wave filter of the acousticwave device.

In an embodiment, each of the at least one second variable capacitancedevice is a varactor.

In an embodiment, further comprising a power amplifier and a low noiseamplifier. The power amplifier is connected to the transmitter acousticwave filter of the acoustic wave duplexer, while the low noise amplifieris connected to the receiver acoustic wave filter of the acoustic waveduplexer.

In an embodiment, the power amplifier and the low noise amplifier areformed on an amplifier substrate.

In an embodiment, the power amplifier, the low noise amplifier, thefirst active adjustment circuit and the at least one first variablecapacitance device are formed on a circuit substrate.

In an embodiment, the second active adjustment circuit and the at leastone second variable capacitance device are formed on the circuitsubstrate.

In an embodiment, the acoustic wave duplexer, the power amplifier, thelow noise amplifier, the first active adjustment circuit and the atleast one first variable capacitance device are formed on the firstsubstrate.

In an embodiment, the second active adjustment circuit and the at leastone second variable capacitance device are formed on the firstsubstrate.

In an embodiment, further comprising an antenna. The antenna isconnected to the acoustic wave duplexer.

In an embodiment, the first acoustic wave filter, the first activeadjustment circuit and the at least one first variable capacitancedevice are formed on the first substrate.

In an embodiment, each of the at least one first variable capacitancedevice is a varactor.

For further understanding the characteristics and effects of the presentinvention, some preferred embodiments referred to drawings are in detaildescribed as follows.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1A is the sectional schematic view of an embodiment of a thermalsensor integrated with acoustic wave device of the present invention.

FIG. 1B is the top view of an embodiment of a thermal sensing acousticwave resonator having a meandered-shaped reflector of the presentinvention.

FIG. 1C is the sectional schematic view of an embodiment of an acousticwave device having a thermal sensor of the present invention.

FIGS. 1D and 1E are the sectional schematic views of the embodiments ofa thermal sensor integrated with acoustic wave device of the presentinvention.

FIG. 1F is the schematic view of an embodiment of a thermal sensitivediode sensor integrated with acoustic wave device of the presentinvention.

FIGS. 1G˜1J are the schematic views of the embodiments of a thermalsensing acoustic wave resonator integrated with acoustic wave device ofthe present invention.

FIGS. 2A˜2G are the schematic views of the embodiments of an activeadjustment circuit of the present invention.

FIGS. 2H˜2P are the schematic views of the embodiments of an activeadjustment circuit of the present invention.

FIGS. 2Q˜2W are the schematic views of the embodiments of an activeadjustment circuit of the present invention.

FIGS. 3A˜3D are the schematic views of the embodiments of an activeadjustment circuit of the present invention.

FIGS. 3E˜3H are the schematic views of the embodiments of an activeadjustment circuit of the present invention.

FIGS. 4A˜4H are the schematic views of the embodiments of an integratedmodule of acoustic wave device with active thermal compensation of thepresent invention.

FIGS. 5A˜5D are the schematic views of the embodiments of an integratedmodule of acoustic wave device with active thermal compensation of thepresent invention.

FIGS. 5E˜5H are the schematic views of the embodiments of an integratedmodule of acoustic wave device with active thermal compensation of thepresent invention.

FIGS. 5I and 5J are the schematic views of the embodiments of anintegrated module of acoustic wave device with active thermalcompensation of the present invention.

FIGS. 5K and 5L are the schematic views of the embodiments of anintegrated module of acoustic wave device with active thermalcompensation of the present invention.

FIG. 6A is the sectional schematic view of a surface acoustic waveresonator of conventional technology.

FIG. 6B is the sectional schematic view of an acoustic wave resonancestructure of a bulk acoustic wave resonator of conventional technology.

FIG. 6C is the sectional schematic view of a thermal sensitiveresistance sensor of conventional technology.

DETAILED DESCRIPTIONS OF PREFERRED EMBODIMENTS

Please refer to FIG. 1A, which shows the sectional schematic view of anembodiment of a thermal sensor integrated with acoustic wave device ofthe present invention. The thermal sensor integrated with acoustic wavedevice comprises an acoustic wave device 11 and a thermal 16(12),wherein the acoustic wave device 11 and the thermal 16(12) are formed ona first substrate 10. In some embodiments, the thermal 16(12) may belocated close to the acoustic wave device 11 for sensing the thermalvariation nearby the acoustic wave device 11. In some embodiments, theacoustic wave device 11 comprises at least one acoustic wave resonator.In some other embodiments, the acoustic wave device 11 comprises atleast one acoustic wave filter, wherein each of the at least oneacoustic wave filter comprises at least one acoustic wave resonator. Insome embodiments, the acoustic wave device 11 comprises at least oneacoustic wave duplexer, wherein each of the at least one acoustic waveduplexer comprises at least one acoustic wave filter, wherein each ofthe at least one acoustic wave filter comprises at least one acousticwave resonator. In some other embodiments, the acoustic wave device 11comprises at least one acoustic wave diplexer, wherein each of the atleast one acoustic wave diplexer comprises at least one acoustic wavefilter, wherein each of the at least one acoustic wave filter comprisesat least one acoustic wave resonator. In some embodiments, the materialof the first substrate 10 is one material selected from the groupconsisting of glass, LiTaO₃, LiNbO₃, quartz, Si, GaAs, GaP, sapphire,Al₂O₃, InP, SiC, diamond, GaN and AlN. In some embodiments of thepresent invention, the acoustic wave resonator may be a bulk acousticwave resonator (BAW) or a thin film bulk acoustic wave resonator (FBAR).The bulk acoustic wave resonator (or the thin film bulk acoustic waveresonator) comprises an acoustic wave resonance structure which is thesame as the acoustic wave resonance structure 64 shown in FIG. 6B. Insome other embodiments of the present invention, the acoustic waveresonator may be a surface acoustic wave resonator (SAW). The surfaceacoustic wave resonator has the same structure shown in FIG. 6A. Thethermal sensor 16 includes at least one selected from the groupconsisting of a sensing capacitance variation type thermal sensor, asensing resistance variation type thermal sensor, a sensing inductancevariation type thermal sensor, a sensing current variation type thermalsensor, a sensing voltage variation type thermal sensor and a sensingresonance frequency variation type thermal sensor. The thermal sensor 16includes at least one selected from the group consisting of a thermalsensitive capacitance, a thermal sensitive resistance (the same as thethermal sensitive resistance sensor 64 shown in FIG. 6C), a thermalsensitive diode sensor and a thermal sensitive transistor sensor. Insome embodiments, the thermal sensor 16 comprises at least one outputterminal. A thermal sensor 16 senses a thermal variation correlated to aphysical property variation of the thermal sensor 16. The physicalproperty variation includes at least one selected from the groupconsisting of a capacitance variation, a resistance variation, aninductance variation, a current variation and a voltage variation and aresonance frequency variation.

In some embodiments, the thermal sensor 16 may be a thermal sensingacoustic wave resonator 12. The present invention provides three typesof the thermal sensing acoustic wave resonator 12. The first type of thethermal sensing acoustic wave resonator 12 may be a surface acousticwave resonator. The surface acoustic wave resonator has the samestructure shown in FIG. 6A. The thermal sensing acoustic wave resonator12 comprises two interlocking comb-shaped electrodes of an interdigitaltransducer and two grating reflectors (the same as the two interlockingcomb-shaped electrodes 611, 612 of the interdigital transducer 610 andtwo grating reflectors 613, 614 shown in FIG. 6A). The thermal sensingacoustic wave resonator 12 senses a thermal variation correlated to acapacitance variation and a resonance frequency variation of the twointerlocking comb-shaped electrodes of the interdigital transducer ofthe thermal sensing acoustic wave resonator 12. The first type of thethermal sensing acoustic wave resonator 12 may be formed on a substrate.The material of the substrate is one material selected from the groupconsisting of glass, LiTaO₃, LiNbO₃, quartz, Si, GaAs, GaP, sapphire,Al₂O₃, InP, SiC, diamond, GaN and AlN.

The second type of the thermal sensing acoustic wave resonator 12 may bea bulk acoustic wave resonator or a thin film bulk acoustic waveresonator, wherein the thermal sensing acoustic wave resonator 12comprises an acoustic wave resonance structure which is the same as theacoustic wave resonance structure 64 shown in FIG. 6B. The acoustic waveresonance structure comprises a bottom electrode, a piezoelectric layerand a top electrode, wherein the piezoelectric layer is formed on thebottom electrode, wherein the top electrode is formed on thepiezoelectric layer (the same as the bottom electrode 61, thepiezoelectric layer 62 and the top electrode 63). The material of thepiezoelectric layer is at least one material selected from the groupconsisting of AlN, quartz, monocrystalline SiO₂, ZnO, HfO₂, bariumstrontium titanate (BST) and lead zirconate titanate (PZT). The thermalsensing acoustic wave resonator 12 senses a thermal variation correlatedto a capacitance variation and a resonance frequency variation of theacoustic wave resonance structure of the thermal sensing acoustic waveresonator 12. The second type of the thermal sensing acoustic waveresonator 12 may be formed on a substrate. The material of the substrateis one material selected from the group consisting of glass, LiTaO₃,LiNbO₃, quartz, Si, GaAs, GaP, sapphire, Al₂O₃, InP, SiC, diamond, GaNand AlN.

Please refer to FIG. 1B, which shows the top view of an embodiment of athermal sensing acoustic wave resonator having a meandered-shapedreflector of the present invention. The embodiment of FIG. 1B is thethird type of the thermal sensing acoustic wave resonator 12 of thepresent invention. The third type of the thermal sensing acoustic waveresonator 12 is a new design of a surface acoustic wave resonator. Thethermal sensing acoustic wave resonator 12 comprises a firstmeandered-shaped reflector 413, a second meandered-shaped reflector 414and two interlocking comb-shaped electrodes 411, 412 of an interdigitaltransducer 410. The two meandered-shaped reflectors 413, 414 and the twointerlocking comb-shaped electrodes 411, 412 of the interdigitaltransducer 410 may be formed on a substrate. The material of thesubstrate is one material selected from the group consisting of glass,LiTaO₃, LiNbO₃, quartz, Si, GaAs, GaP, sapphire, Al₂O₃, InP, SiC,diamond, GaN and AlN. The two meandered-shaped reflectors 413, 414 areformed respectively at two sides of the two interlocking comb-shapedelectrodes 411, 412 of the interdigital transducer 410. In currentembodiment, there are two meandered-shaped reflectors 413, 414. In someother embodiments, there is only one meandered-shaped reflector (thefirst meandered-shaped reflector 413 or the second meandered-shapedreflector 414). In the present invention, a new design of themeandered-shaped reflector (the first meandered-shaped reflector 413 orthe second meandered-shaped reflector 414) can be used as a thermalsensitive resistance sensor. The meandered-shaped reflector (the firstmeandered-shaped reflector 413 or the second meandered-shaped reflector414) senses a thermal variation correlated to a resistance variation ofthe meandered-shaped reflector (the first meandered-shaped reflector 413or the second meandered-shaped reflector 414). The thermal sensingacoustic wave resonator 12 further comprises an output terminal 415 ofthe first meandered-shaped reflector 413 and an output terminal 416 ofthe second meandered-shaped reflector 414 for connection.

Please refer to FIG. 1C, which shows the sectional schematic view of anembodiment of an acoustic wave device having a thermal sensor of thepresent invention. The main structure of the embodiment in FIG. 1C isbasically the same as the structure of the embodiment in FIG. 1A, exceptthat the thermal sensing acoustic wave resonator 12 is a first type, asecond type or a third type of the thermal sensing acoustic waveresonator 12 and the acoustic wave device 11 comprises the thermalsensing acoustic wave resonator 12. In current embodiment, the thermalsensing acoustic wave resonator 12 plays dual roles of thermal sensingand acoustic wave filtering. For example, in some embodiments, thethermal sensing acoustic wave resonator 12 is a third type of thethermal sensing acoustic wave resonator 12. The two interlockingcomb-shaped electrodes 411, 412 of the interdigital transducer 410 mayplay a role of acoustic wave filtering, while the meandered-shapedreflector (the first meandered-shaped reflector 413 or the secondmeandered-shaped reflector 414) may play a role of thermal sensing. Someother embodiments will be discussed later in the embodiments of FIGS.1I, 1J, 4C, 4G 4H, 5A˜5E and 5I˜5L.

Please refer to FIG. 1D, which shows the sectional schematic view ofanother embodiment of a thermal sensor integrated with acoustic wavedevice of the present invention. The main structure of the embodiment inFIG. 1D is basically the same as the structure of the embodiment in FIG.1A, except that the thermal sensor 16(12) is formed on a secondsubstrate 13. In some embodiments, the second substrate 13 may bepositioned close to the first substrate 10. In some embodiments, thesecond substrate 13 may be bonded with the first substrate 10.

Please refer to FIG. 1E, which shows the sectional schematic views ofanother embodiment of a thermal sensor integrated with acoustic wavedevice of the present invention. The main structure of the embodiment inFIG. 1E is basically the same as the structure of the embodiment in FIG.1D, except that the second substrate 13 and the first substrate 10 arestacked with each other, wherein each of at least one metal pillars 14are formed on one of the first substrate 10 and the second substrate 13and connected with the other.

Please refer to FIG. 1F, which shows the schematic view of an embodimentof a thermal sensitive diode sensor integrated with acoustic wave deviceof the present invention. In current embodiment, the acoustic wavedevice 11 is an acoustic wave filter. The acoustic wave filter comprisesfour series acoustic wave resonators 17 and three shunt acoustic waveresonators 18. Each of the series acoustic wave resonators 17 and theshunt acoustic wave resonators 18 is one of a surface acoustic waveresonator, a bulk acoustic wave resonator and a thin film bulk acousticwave resonator. That is that the four series acoustic wave resonators 17and the three shunt acoustic wave resonators 18 are the same type ofacoustic wave resonators of (i) surface acoustic wave resonators, (ii)bulk acoustic wave resonators, or (iii) thin film bulk acoustic waveresonators. The four series acoustic wave resonators 17 are connected inseries. Each of the three shunt acoustic wave resonators 18 is connectedto a junction between two adjacent series acoustic wave resonators 17.The thermal sensor 16 is a thermal sensitive diode sensor. The thermalsensitive diode sensor senses a thermal variation correlated to at leastone of a resistance variation, a current variation and a voltagevariation. In some embodiment, the thermal sensitive diode sensor sensesa thermal variation correlated to a variation of a forward voltage ofthe thermal sensitive diode sensor. In some embodiments, the acousticwave device 11 and the thermal sensitive diode sensor 16 may be formedon a first substrate 10 (as shown in FIG. 1A). In some otherembodiments, the acoustic wave device 11 may be formed on a firstsubstrate 10 while the thermal sensitive diode sensor 16 may be formedon a second substrate 13 (as shown in FIG. 1D). In some embodiments, theacoustic wave device 11 may be formed on a first substrate 10 while thethermal sensitive diode sensor 16 may be formed on a second substrate13, wherein the first substrate 10 and the second substrate 13 arestacked with each other, wherein each of at least one metal pillars 14are formed on one of the first substrate 10 and the second substrate 13and connected with the other (as shown in FIG. 1E).

Please refer to FIG. 1G, which shows the schematic view of an embodimentof a thermal sensing acoustic wave resonator integrated with acousticwave device of the present invention. In current embodiment, theacoustic wave device 11 is an acoustic wave filter. The acoustic wavefilter comprises four series acoustic wave resonators 17 and three shuntacoustic wave resonators 18. The series acoustic wave resonators 17 andthe shunt acoustic wave resonators 18 are surface acoustic waveresonators. The four series acoustic wave resonators 17 are connected inseries. Each of the three shunt acoustic wave resonators 18 is connectedto a junction between two adjacent series acoustic wave resonators 17.The thermal sensing acoustic wave resonator 12 is a surface acousticwave resonator, that is, the first type of the thermal sensing acousticwave resonator 12 of the present invention. The thermal sensing acousticwave resonator 12 senses a thermal variation correlated to one of acapacitance variation and a frequency variation of the thermal sensingacoustic wave resonator 12. In some embodiments, the acoustic wavedevice 11 and the thermal sensing acoustic wave resonator 12 may beformed on a first substrate 10 (as shown in FIG. 1A). In some otherembodiments, the acoustic wave device 11 may be formed on a firstsubstrate 10 while the thermal sensing acoustic wave resonator 12 may beformed on a second substrate 13 (as shown in FIG. 1D). In someembodiments, the acoustic wave device 11 may be formed on a firstsubstrate 10 while the thermal sensing acoustic wave resonator 12 may beformed on a second substrate 13, wherein the first substrate 10 and thesecond substrate 13 are stacked with each other, wherein each of atleast one metal pillars 14 are formed on one of the first substrate 10and the second substrate 13 and connected with the other (as shown inFIG. 1E).

Please refer to FIG. 1H, which shows the schematic view of an embodimentof a thermal sensing acoustic wave resonator integrated with acousticwave device of the present invention. In current embodiment, theacoustic wave device 11 is an acoustic wave filter. The acoustic wavefilter comprises four series acoustic wave resonators 17 and three shuntacoustic wave resonators 18. Each of the series acoustic wave resonators17 and the shunt acoustic wave resonators 18 is one of a bulk acousticwave resonator and a thin film bulk acoustic wave resonator. That isthat the four series acoustic wave resonators 17 and the three shuntacoustic wave resonators 18 are the same type of acoustic waveresonators of (i) bulk acoustic wave resonators, or (ii) thin film bulkacoustic wave resonators. The four series acoustic wave resonators 17are connected in series. Each of the three shunt acoustic waveresonators 18 is connected to a junction between two adjacent seriesacoustic wave resonators 17. The thermal sensing acoustic wave resonator12 is a bulk acoustic wave resonator or a thin film bulk acoustic waveresonator, that is, the second type of the thermal sensing acoustic waveresonator 12. The thermal sensing acoustic wave resonator 12 senses athermal variation correlated to one of a capacitance variation and afrequency variation of the thermal sensing acoustic wave resonator 12.In some embodiments, the acoustic wave device 11 and the thermal sensingacoustic wave resonator 12 may be formed on a first substrate 10 (asshown in FIG. 1A). In some other embodiments, the acoustic wave device11 may be formed on a first substrate 10 while the thermal sensingacoustic wave resonator 12 may be formed on a second substrate 13 (asshown in FIG. 1D). In some embodiments, the acoustic wave device 11 maybe formed on a first substrate 10 while the thermal sensing acousticwave resonator 12 may be formed on a second substrate 13, wherein thefirst substrate 10 and the second substrate 13 are stacked with eachother, wherein each of at least one metal pillars 14 are formed on oneof the first substrate 10 and the second substrate 13 and connected withthe other (as shown in FIG. 1E).

In some embodiments, the three types of the thermal sensing acousticwave resonator 12 of the present invention may play dual roles ofthermal sensing and acoustic wave filtering. Some embodiments are shownin FIGS. 1I, 1J, 4B˜4D, 5A-5E and 5I˜5L.

Please refer to FIG. 1I, which shows the schematic view of an embodimentof a thermal sensing acoustic wave resonator integrated with acousticwave device of the present invention. In current embodiment, theacoustic wave device 11 comprises an acoustic wave filter. The acousticwave filter comprises four series acoustic wave resonators 17, two shuntacoustic wave resonators 18 and a thermal sensing acoustic waveresonator 12. Each of the series acoustic wave resonators 17, the shuntacoustic wave resonators 18 and the thermal sensing acoustic waveresonator 12 is one of a surface acoustic wave resonator, a bulkacoustic wave resonator and a thin film bulk acoustic wave resonator.That is that the four series acoustic wave resonators 17, the two shuntacoustic wave resonators 18 and the thermal sensing acoustic waveresonator 12 are the same type of acoustic wave resonators of (i)surface acoustic wave resonators (wherein the thermal sensing acousticwave resonator 12 is the first type of the thermal sensing acoustic waveresonator 12 of the present invention), (ii) bulk acoustic waveresonators (wherein the thermal sensing acoustic wave resonator 12 isthe second type of the thermal sensing acoustic wave resonator 12 of thepresent invention), or (iii) thin film bulk acoustic wave resonators(wherein the thermal sensing acoustic wave resonator 12 is the secondtype of the thermal sensing acoustic wave resonator 12 of the presentinvention). The four series acoustic wave resonators 17, the two shuntacoustic wave resonators 18 and the thermal sensing acoustic waveresonator 12 are formed on a substrate (not shown in the Figure),wherein the material of the substrate is one material selected from thegroup consisting of glass, LiTaO₃, LiNbO₃, quartz, Si, GaAs, GaP,sapphire, Al₂O₃, InP, SiC, diamond, GaN and AlN. The thermal sensingacoustic wave resonator 12 senses a thermal variation correlated to oneof a capacitance variation and a frequency variation of the thermalsensing acoustic wave resonator 12. In current embodiment, the fourseries acoustic wave resonators 17 are connected in series. Each of thetwo shunt acoustic wave resonators 18 is connected to a junction betweentwo adjacent series acoustic wave resonators 17. The thermal sensingacoustic wave resonator 12 is connected to a junction between two seriesacoustic wave resonators 17. The thermal sensing acoustic wave resonator12 plays a role of a shunt acoustic wave resonator of the acoustic wavefilter. Therefore, the thermal sensing acoustic wave resonator 12 mayplay dual roles of thermal sensing and acoustic wave filtering (a shuntacoustic wave resonator of the acoustic wave filter). In some otherembodiments, the thermal sensing acoustic wave resonator 12 and theseries acoustic wave resonators 17 are connected in series such that thethermal sensing acoustic wave resonator 12 may plays a role of a seriesacoustic wave resonator of the acoustic wave filter. Therefore, thethermal sensing acoustic wave resonator 12 may play dual roles ofthermal sensing and acoustic wave filtering (a series acoustic waveresonator of the acoustic wave filter).

Please refer to FIG. 1J, which shows the schematic view of an embodimentof a thermal sensing acoustic wave resonator integrated with acousticwave device of the present invention. In current embodiment, theacoustic wave device 11 is an acoustic wave filter. The acoustic wavefilter comprises three series acoustic wave resonators 17, three shuntacoustic wave resonators 18 and a thermal sensing acoustic waveresonator 12. The three series acoustic wave resonators 17 and the threeshunt acoustic wave resonators 18 are surface acoustic wave resonators.In current embodiment, the thermal sensing acoustic wave resonator 12 isthe third type of the thermal sensing acoustic wave resonator 12. Thethree series acoustic wave resonators 17, the three shunt acoustic waveresonators 18 and the thermal sensing acoustic wave resonator 12 areformed on a substrate (not shown in the Figure), wherein the material ofthe substrate is one material selected from the group consisting ofglass, LiTaO₃, LiNbO₃, quartz, Si, GaAs, GaP, sapphire, Al₂O₃, InP, SiC,diamond, GaN and AlN. The meandered-shaped reflector (the firstmeandered-shaped reflector 413 or the second meandered-shaped reflector414 as shown in FIG. 1B) of the thermal sensing acoustic wave resonator12 senses a thermal variation correlated to a resistance variation ofthe meandered-shaped reflector (the first meandered-shaped reflector 413or the second meandered-shaped reflector 414). In current embodiment,the two interlocking comb-shaped electrodes 411, 412 of the interdigitaltransducer 410 of the thermal sensing acoustic wave resonator 12 and thethree series acoustic wave resonators 17 are connected in series so thatthe two interlocking comb-shaped electrodes 411, 412 of the interdigitaltransducer 410 of the thermal sensing acoustic wave resonator 12 plays arole of a series acoustic wave resonator of the acoustic wave filter,wherein each of the three shunt acoustic wave resonators 18 is connectedto a junction between two adjacent series acoustic wave resonators 17 orbetween the thermal sensing acoustic wave resonator 12 and one adjacentseries acoustic wave resonators 17. Therefore, the thermal sensingacoustic wave resonator 12 may play dual roles of thermal sensing andacoustic wave filtering (a series acoustic wave resonator of theacoustic wave filter). In some other embodiments, the two interlockingcomb-shaped electrodes 411, 412 of the interdigital transducer 410 ofthe thermal sensing acoustic wave resonator 12 may be connected ajunction between two series acoustic wave resonators 17 such that thethermal sensing acoustic wave resonator 12 may plays a role of a shuntacoustic wave resonator of the acoustic wave filter. Therefore, thethermal sensing acoustic wave resonator 12 may play dual roles ofthermal sensing and acoustic wave filtering (a shunt acoustic waveresonator of the acoustic wave filter).

An active adjustment circuit 32 comprises at least one input terminal,at least one bias adjustment circuit and at least one output terminal.Please refer to FIGS. 2A˜2G, which show the schematic views of theembodiments of an active adjustment circuit of the present invention. Inthese embodiments, the active adjustment circuit 32 comprises an inputterminal 21, a bias adjustment circuit 20 and an output terminal 22.

Please refer to FIGS. 2B˜2D. The design of active adjustment circuit 32is suitable for a thermal sensitive resistance sensor as shown in FIG.6C or the meandered-shaped reflector (the first meandered-shapedreflector 413 or the second meandered-shaped reflector 414) of the thirdtype of the thermal sensing acoustic wave resonator 12 as shown in FIG.1B. Let the input terminal 21 connect with the thermal sensitiveresistance sensor (or the output terminal 415 of the firstmeandered-shaped reflector 413 or the output terminal 416 of the secondmeandered-shaped reflector 414). The thermal sensitive resistance sensor(or the first meandered-shaped reflector 413 or the secondmeandered-shaped reflector 414) senses a thermal variation correlated toa resistance variation of the thermal sensitive resistance sensor (orthe output terminal 415 of the first meandered-shaped reflector 413 orthe output terminal 416 of the second meandered-shaped reflector 414).The resistance variation of the thermal sensitive resistance sensor (orthe first meandered-shaped reflector 413 or the second meandered-shapedreflector 414) causes a voltage variation at Node A. According to thevoltage variation at Node A, the bias adjustment circuit 20 adjusts andoutputs an active thermal compensating signal through an output terminal22 of the active adjustment circuit 32. Therefore, the active thermalcompensating signal is correlated to the thermal variation.

Please refer to FIGS. 2E˜2G The design of active adjustment circuit 32is suitable for a thermal sensitive diode sensor. Let the input terminal21 connect with the thermal sensitive diode sensor. The thermalsensitive diode sensor senses a thermal variation correlated to avariation of a forward voltage of the thermal sensitive diode sensor.The forward voltage of the thermal sensitive diode sensor causes avoltage variation at Node A. According to the voltage variation at NodeA, the bias adjustment circuit 20 adjusts and outputs an active thermalcompensating signal through an output terminal 22 of the activeadjustment circuit 32. Therefore, the active thermal compensating signalis correlated to the thermal variation.

Please refer to FIGS. 2H˜2P, which show the schematic views of theembodiments of an active adjustment circuit of the present invention. Inthese embodiments, the active adjustment circuit 32 comprises an inputterminal 21, a bias adjustment circuit 20, a conversion circuit 23 andan output terminal 22. The conversion circuit 23 is electricallyconnected with the input terminal 21 and the bias adjustment circuit 20.The output terminal 22 is electrically connected with the biasadjustment circuit 20.

Please refer to FIG. 2I. In current embodiment, the active adjustmentcircuit 32 is suitable for a thermal sensitive capacitor sensor (or afirst type or a second type of the thermal sensing acoustic waveresonator 12, that is, one of a bulk acoustic wave resonator, a thinfilm bulk acoustic wave resonator and a surface acoustic waveresonator). The conversion circuit 23 is a buck DC-DC converter circuit.An output terminal of the conversion circuit 23 is connected to an inputterminal of the bias adjustment circuit 20. The conversion circuit 23comprises a DC source 201, a switching transistor 202, a pulse generator203, a diode 204, an inductor 205 and a capacitor 206. A first terminalof the switching transistor 202 is connected to the DC source 201. Asecond terminal of the switching transistor 202 is connected to a firstterminal of the inductor 205 and a cathode terminal of the diode 204. Athird terminal of the switching transistor 202 is connected to the pulsegenerator 203. A second terminal of the inductor 205 is connected to theoutput terminal of the conversion circuit 23 and a first terminal of thecapacitor 206. An anode terminal of the diode 204 and a second terminalof the capacitor 206 are grounded. A thermal sensitive capacitor sensor(or a first type or a second type of the thermal sensing acoustic waveresonator 12) can be connected to the input terminal 21 such that thethermal sensitive capacitor sensor (or a first type or a second type ofthe thermal sensing acoustic wave resonator 12) is connected in parallelto the inductor 205. The output terminal of the conversion circuit 23outputs a converted circuit signal to the bias adjustment circuit 20through the input terminal of the bias adjustment circuit 20. Thethermal sensitive capacitor sensor (or a first type or a second type ofthe thermal sensing acoustic wave resonator 12) senses a thermalvariation correlated to a capacitance variation of the thermal sensitivecapacitor sensor (or a first type or a second type of the thermalsensing acoustic wave resonator 12). The capacitance variation of thethermal sensitive capacitor sensor (or a first type or a second type ofthe thermal sensing acoustic wave resonator 12) induces a variation ofan internal parasitic capacitance of the inductor 205 causing avariation of an energy stored in the inductor 205. Thereby the variationof the energy stored in the inductor 205 causes a variation of theconverted circuit signal; hence the variation of the converted circuitsignal is correlated to the thermal variation. The bias adjustmentcircuit 20 adjusts the converted circuit signal received from the outputterminal of the conversion circuit 23 and outputs an active thermalcompensating signal through an output terminal 22 of the activeadjustment circuit 32. The thermal sensitive capacitor sensor (or afirst type or a second type of the thermal sensing acoustic waveresonator 12) may be formed on a substrate, wherein the material of thesubstrate is one material selected from the group consisting of glass,LiTaO₃, LiNbO₃, quartz, Si, GaAs, GaP, sapphire, Al₂O₃, InP, SiC,diamond, GaN and AlN.

Please refer to FIG. 2J. In current embodiment, the active adjustmentcircuit 32 is suitable for a thermal sensitive capacitor sensor (or afirst type or a second type of the thermal sensing acoustic waveresonator 12, that is, one of a bulk acoustic wave resonator, a thinfilm bulk acoustic wave resonator and a surface acoustic waveresonator). The conversion circuit 23 is a boost DC-DC convertercircuit. An output terminal of the conversion circuit 23 is connected toan input terminal of the bias adjustment circuit 20. The conversioncircuit 23 comprises a DC source 201, a switching transistor 202, apulse generator 203, a diode 204, an inductor 205 and a capacitor 206. Afirst terminal of the inductor 205 is connected to the DC source 201. Asecond terminal of the inductor 205 is connected to a first terminal ofthe switching transistor 202 and an anode terminal of the diode 204. Acathode terminal of the diode 204 is connected to the output terminal ofthe conversion circuit 23 and a first terminal of the capacitor 206. Asecond terminal of the switching transistor 202 and a second terminal ofthe capacitor 206 are grounded. A third terminal of the switchingtransistor 202 is connected to the pulse generator 203. A thermalsensitive capacitor sensor (or a first type or a second type of thethermal sensing acoustic wave resonator 12, that is, one of a bulkacoustic wave resonator, a thin film bulk acoustic wave resonator and asurface acoustic wave resonator) can be connected to the input terminal21 such that the thermal sensitive capacitor sensor (or a first type ora second type of the thermal sensing acoustic wave resonator 12) isconnected in parallel to the inductor 205. The output terminal of theconversion circuit 23 outputs a converted circuit signal to the biasadjustment circuit 20 through the input terminal of the bias adjustmentcircuit 20. The thermal sensitive capacitor sensor (or a first type or asecond type of the thermal sensing acoustic wave resonator 12) senses athermal variation correlated to a capacitance variation of the thermalsensitive capacitor sensor (or a first type or a second type of thethermal sensing acoustic wave resonator 12). The capacitance variationof the thermal sensitive capacitor sensor (or a first type or a secondtype of the thermal sensing acoustic wave resonator 12) induces avariation of an internal parasitic capacitance of the inductor 205causing a variation of an energy stored in the inductor 205. Thereby thevariation of the energy stored in the inductor 205 causes a variation ofthe converted circuit signal; hence the variation of the convertedcircuit signal is correlated to the thermal variation. The biasadjustment circuit 20 adjusts the converted circuit signal received fromthe output terminal of the conversion circuit 23 and outputs an activethermal compensating signal through an output terminal 22 of the activeadjustment circuit 32. The thermal sensitive capacitor sensor (or afirst type or a second type of the thermal sensing acoustic waveresonator 12) may be formed on a substrate, wherein the material of thesubstrate is one material selected from the group consisting of glass,LiTaO₃, LiNbO₃, quartz, Si, GaAs, GaP, sapphire, Al₂O₃, InP, SiC,diamond, GaN and AlN.

Please refer to FIG. 2K. In current embodiment, the active adjustmentcircuit 32 is suitable for a thermal sensitive diode sensor. An outputterminal of the conversion circuit 23 is connected to an input terminalof the bias adjustment circuit 20. A thermal sensitive diode sensor canbe connected to the input terminal 21. The conversion circuit 23comprises a DC source 201, a switching transistor 202, a pulse generator203, an inductor 205 and a capacitor 206. A first terminal of theswitching transistor 202 is connected to the DC source 201. A secondterminal of the switching transistor 202 is connected to a cathodeterminal of the thermal sensitive diode sensor and a first terminal ofthe inductor 205. A third terminal of the switching transistor 202 isconnected to the pulse generator 203. A second terminal of the inductor205 is connected to the output terminal of the conversion circuit 23 anda first terminal of the capacitor 206. An anode terminal of the thermalsensitive diode sensor and a second terminal of the capacitor 206 aregrounded. The output terminal of the conversion circuit 23 outputs aconverted circuit signal to the bias adjustment circuit 20 through theinput terminal of the bias adjustment circuit 20. The thermal sensitivediode sensor senses a thermal variation correlated to a variation of aforward voltage of the thermal sensitive diode sensor. The variation ofthe forward voltage of the thermal sensitive diode sensor causes avariation of the converted circuit signal; hence the variation of theconverted circuit signal is correlated to the thermal variation. Thebias adjustment circuit 20 adjusts the converted circuit signal receivedfrom the output terminal of the conversion circuit 23 and outputs anactive thermal compensating signal through an output terminal 22 of theactive adjustment circuit 32. The thermal sensitive diode sensor may bea thermal sensing acoustic wave resonator 12 which is one selected fromthe group consisting of a bulk acoustic wave resonator, a thin film bulkacoustic wave resonator and a surface acoustic wave resonator. Thethermal sensitive diode sensor may be formed on a substrate, wherein thematerial of the substrate is one material selected from the groupconsisting of glass, LiTaO₃, LiNbO₃, quartz, Si, GaAs, GaP, sapphire,Al₂O₃, InP, SiC, diamond, GaN and AlN.

Please refer to FIG. 2L. In current embodiment, the active adjustmentcircuit 32 is suitable for a thermal sensitive diode sensor. An outputterminal of the conversion circuit 23 is connected to an input terminalof the bias adjustment circuit 20. A thermal sensitive diode sensor canbe connected to the input terminal 21. The conversion circuit 23comprises a DC source 201, a switching transistor 202, a pulse generator203, an inductor 205 and a capacitor 206. A first terminal of theinductor 205 is connected to the DC source 201. A second terminal of theinductor 205 is connected to an anode terminal of the thermal sensitivediode sensor and a second terminal of the switching transistor 202. Athird terminal of the switching transistor 203 is connected to the pulsegenerator 203. A cathode terminal of the thermal sensitive diode sensoris connected to the output terminal of the conversion circuit 23 and afirst terminal of the capacitor 206. A first terminal of the switchingtransistor 202 and a second terminal of the capacitor 206 are grounded.The output terminal of the conversion circuit 23 outputs a convertedcircuit signal to the bias adjustment circuit 20 through the inputterminal of the bias adjustment circuit 20. The thermal sensitive diodesensor senses a thermal variation correlated to a variation of a forwardvoltage of the thermal sensitive diode sensor. The variation of theforward voltage of the thermal sensitive diode sensor causes a variationof the converted circuit signal; hence the variation of the convertedcircuit signal is correlated to the thermal variation. The biasadjustment circuit 20 adjusts the converted circuit signal received fromthe output terminal of the conversion circuit 23 and outputs an activethermal compensating signal through an output terminal 22 of the activeadjustment circuit 32. The thermal sensitive diode sensor may be athermal sensing acoustic wave resonator 12 which is one selected fromthe group consisting of a bulk acoustic wave resonator, a thin film bulkacoustic wave resonator and a surface acoustic wave resonator. Thethermal sensitive diode sensor may be formed on a substrate, wherein thematerial of the substrate is one material selected from the groupconsisting of glass, LiTaO₃, LiNbO₃, quartz, Si, GaAs, GaP, sapphire,Al₂O₃, InP, SiC, diamond, GaN and AlN.

Please refer to FIGS. 2M˜2N. The design of active adjustment circuit 32is suitable for a thermal sensitive resistance, a thermal sensitivediode sensor, the meandered-shaped reflector (the first meandered-shapedreflector 413 or the second meandered-shaped reflector 414) of the thirdtype of the thermal sensing acoustic wave resonator 12 as shown in FIG.1B, a thermal sensitive capacitor sensor or a first type or a secondtype of the thermal sensing acoustic wave resonator 12 (that is, one ofa bulk acoustic wave resonator, a thin film bulk acoustic wave resonatorand a surface acoustic wave resonator). For example, in FIG. 2M; let theinput terminal 21 connect with a thermal sensor (a thermal sensitivecapacitor sensor or a first type or a second type of the thermal sensingacoustic wave resonator 12). A thermal variation causes a physicalproperty variation (capacitance variation) of the thermal sensor.Therefore, a frequency variation of the pulse generated by theoscillator is caused. After the frequency to voltage conversion circuit,the output voltage variation of the conversion circuit 23 correspondingto the thermal variation is caused. After the adjustment of the biasadjustment circuit 20. The output terminal 22 receives an adjustedoutput voltage variation which is corresponding to the thermalvariation. Similarly, in FIG. 2N, a thermal variation causes a physicalproperty variation (capacitance variation) of the thermal sensor. Apulse width variation of the pulse generated by the PWM modulator iscaused. Therefore, the output terminal 22 receives an adjusted outputvoltage variation which is corresponding to the thermal variation. Letthe input terminal 21 connect with a thermal sensor (a thermal sensitiveresistance, a thermal sensitive diode sensor, the output terminal 415 ofthe first meandered-shaped reflector 413 or the output terminal 416 ofthe second meandered-shaped reflector 414) as shown in FIG. 1B). Athermal variation causes a physical property variation (resistancevariation) of the thermal sensor. Therefore, a frequency variation ofthe pulse generated by the oscillator is caused (FIG. 2M) or a pulsewidth variation of the pulse generated by the PWM modulator is caused(FIG. 2N). Hence, the output terminal 22 may receive an adjusted outputvoltage variation which is corresponding to the thermal variation.

Please refer to FIG. 2O. The design of active adjustment circuit 32 issuitable for a thermal sensor (a thermal sensitive diode sensor, athermal sensitive capacitor sensor or a first type or a second type ofthe thermal sensing acoustic wave resonator 12). Let the input terminal21 connect with the thermal sensor (a thermal sensitive capacitor sensoror a first type or a second type of the thermal sensing acoustic waveresonator 12). A thermal variation causes a physical property variation(capacitance variation) of the thermal sensor. Therefore a voltagevariation of the AC signal of the AC source is caused. After the powerdetector or the rectifier, a DC signal is generated. The DC signal iscorresponding to the thermal variation. Hence, after the adjustment ofthe bias adjustment circuit 20. The output terminal 22 receives anadjusted output voltage variation which is corresponding to the thermalvariation.

Please refer to FIG. 2P. The design of active adjustment circuit 32 issuitable for a thermal sensor (a thermal sensitive diode sensor, athermal sensitive capacitor sensor or a first type or a second type ofthe thermal sensing acoustic wave resonator 12). Let the input terminal21 connect with the thermal sensor (a thermal sensitive capacitor sensoror a first type or a second type of the thermal sensing acoustic waveresonator 12). After the mixer mixing two pulses generated by thedetected oscillator and the referred oscillator, a signal with afrequency is generated by the mixer. The frequency of the signalgenerated by the mixer is the frequency difference of the frequency ofthe pulse generated by the detected oscillator and the frequency of thepulse generated by the referred oscillator. A thermal variation causes aphysical property variation (capacitance variation) of the thermalsensor. Therefore, a frequency variation of the pulse generated by thedetected oscillator is caused. Hence, the frequency of the signalgenerated by the mixer also causes a frequency variation. After thepower detector or the rectifier, a DC signal is generated. The DC signalis corresponding to the thermal variation. Hence, after the adjustmentof the bias adjustment circuit 20. The output terminal 22 receives anadjusted output voltage variation which is corresponding to the thermalvariation.

Please refer to FIGS. 2Q˜2W, which show the schematic views of theembodiments of an active adjustment circuit of the present invention. Inthese embodiments, the active adjustment circuit 32 comprises an inputterminal 21, a bias adjustment circuit 20, a conversion circuit 23 andan output terminal 22. The bias adjustment circuit 20 is electricallyconnected with the input terminal 21 and the conversion circuit 23. Theoutput terminal 22 is electrically connected with the conversion circuit23.

Please refer to FIGS. 2R˜2T. The design of active adjustment circuit 32is suitable for a thermal sensor (a thermal sensitive resistance, thefirst meandered-shaped reflector 413 or the second meandered-shapedreflector 414 of the third type of the thermal sensing acoustic waveresonator 12 as shown in FIG. 1B). Let the input terminal 21 connectwith the thermal sensor (a thermal sensitive resistance, the outputterminal 415 of the first meandered-shaped reflector 413 or the outputterminal 416 of the second meandered-shaped reflector 414 as shown inFIG. 1B). The current I₁ is proportional to the current I_(out).Therefore, a thermal variation causes a physical property variation(resistance variation) of the thermal sensor. A current variation of thecurrent I₁ is caused and also a current variation of the current I_(out)is caused too. After the current to voltage conversion 23, the outputterminal 22 receives an output voltage variation which is correspondingto the thermal variation.

Please refer to FIGS. 2U˜2W. The design of active adjustment circuit 32is suitable for a thermal sensitive transistor sensor. Let the inputterminal 21 connect with the thermal sensitive transistor sensor. Thecurrent I₁ is proportional to the current I_(out). Therefore, a thermalvariation causes a physical property variation (voltage variation) ofthe thermal sensor. A current variation of the current I₁ is caused andalso a current variation of the current I_(out) is caused too. After thecurrent to voltage conversion 23, the output terminal 22 receives anoutput voltage variation which is corresponding to the thermalvariation.

Please refer to FIGS. 3A˜3D, which show the schematic views of theembodiments of an active adjustment circuit of the present invention. Inthese embodiments, the active adjustment circuit 32 comprises an inputterminal 21, a conversion circuit 23, a bias adjustment circuit 20 andan output terminal 22. An input terminal of the conversion circuit 23 isconnected to the input terminal 21 of the active adjustment circuit 32.An output of the conversion circuit 23 is connected to an input terminalof the bias adjustment circuit 20. An output terminal of the biasadjustment circuit 20 is connected to the output terminal 22 of theactive adjustment circuit 32. The design of the active adjustmentcircuit 32 (in the embodiments of FIGS. 3A˜3D) is suitable for a thermalsensitive resistance sensor or the meandered-shaped reflector (the firstmeandered-shaped reflector 413 or the second meandered-shaped reflector414) of the third type of the thermal sensing acoustic wave resonator 12as shown in FIG. 1B. For example, the input terminal 21 can be connectedto one of the output terminal 415 of the first meandered-shapedreflector 413 and the output terminal 416 of the second meandered-shapedreflector 414 of the thermal sensing acoustic wave resonator 12.

Please refer to FIG. 3A. The conversion circuit 23 comprises a DC source201, a switching transistor 202, a pulse generator 203, a diode 204, aninductor 205 and a capacitor 206. A first terminal of the inductor 205is connected to the DC source 201. A second terminal of the inductor 205is connected to a first terminal of the switching transistor 202 and ananode terminal of the diode 204. A third terminal of the switchingtransistor 202 is connected to the pulse generator 203. A cathodeterminal of the diode 204 is connected to the output terminal of theconversion circuit 23 and a first terminal of the capacitor 206. Asecond terminal of the switching transistor 202 and a second terminal ofthe capacitor 206 are grounded. A thermal sensor (a thermal sensitiveresistance sensor or a third type of the thermal sensing acoustic waveresonator 12) can be connected between a ground and a junction of thesecond terminal of the inductor 205, the first terminal of the switchingtransistor 202 and the anode terminal of the diode 204. The outputterminal of the conversion circuit 23 outputs a converted circuit signalto the bias adjustment circuit 20 through the input terminal of the biasadjustment circuit 20. A variation of the converted circuit signal iscorrelated to a resistance variation of the thermal sensor (which iscorrelated to the thermal variation). The bias adjustment circuit 20adjusts the converted circuit signal received from the output terminalof the conversion circuit 23 and outputs an active thermal compensatingsignal through an output terminal 22 of the active adjustment circuit32.

The main structure of the embodiment of FIG. 3B is basically the same asthe structure of the embodiment of FIG. 3A, except that the secondterminal of the switching transistor 202 is not grounded and the thermalsensor (a thermal sensitive resistance sensor or a third type of thethermal sensing acoustic wave resonator 12) can be connected between theground and the second terminal of the switching transistor 202.

Please refer to FIG. 3C. The conversion circuit 23 comprises a DC source201, a switching transistor 202, a pulse generator 203, a diode 204, aninductor 205 and a capacitor 206. A first terminal of the switchingtransistor 202 is connected to the DC source 201. A third terminal ofthe switching transistor 202 is connected to the pulse generator 203. Asecond terminal of the switching transistor 202 is connected to acathode terminal of the diode 204 and a first terminal of the inductor205. A second terminal of the inductor 205 is connected to the outputterminal of the conversion circuit 23 and a first terminal of thecapacitor 206. A second terminal of the capacitor 206 and an anodeterminal of the diode 204 are grounded. A thermal sensor (a thermalsensitive resistance sensor or a third type of the thermal sensingacoustic wave resonator 12) can be connected between a ground and ajunction of the second terminal of the switching transistor 202, thecathode terminal of the diode 204 and the first terminal of the inductor205. The output terminal of the conversion circuit 23 outputs aconverted circuit signal to the bias adjustment circuit 20 through theinput terminal of the bias adjustment circuit 20. A variation of theconverted circuit signal is correlated to a resistance variation of thethermal sensor (which is correlated to the thermal variation). The biasadjustment circuit 20 adjusts the converted circuit signal received fromthe output terminal of the conversion circuit 23 and outputs an activethermal compensating signal through an output terminal 22 of the activeadjustment circuit 32.

The main structure of the embodiment of FIG. 3D is basically the same asthe structure of the embodiment of FIG. 3C, except that the anodeterminal of the diode 204 is not grounded and the thermal sensor (athermal sensitive resistance sensor or a third type of the thermalsensing acoustic wave resonator 12) can be connected between the groundand the anode terminal of the diode 204.

Please refer to FIGS. 3E˜3H, which show the schematic views of theembodiments of an active adjustment circuit of the present invention. Inthese embodiments, the active adjustment circuit 32 comprises inputterminals 21, 21′, a conversion circuit 23, a bias adjustment circuit 20and an output terminal 22. An input terminal of the conversion circuit23 is connected to the input terminal 21 of the active adjustmentcircuit 32. An output of the conversion circuit 23 is connected to aninput terminal of the bias adjustment circuit 20. An output terminal ofthe bias adjustment circuit 20 is connected to the output terminal 22 ofthe active adjustment circuit 32. The design of the active adjustmentcircuit 32 (in the embodiments of FIGS. 3E˜3H) is suitable for a thermalsensitive resistance sensor or a third type of the thermal sensingacoustic wave resonator 12. The input terminal 21 can be connected toone of the output terminal 415 of the first meandered-shaped reflector413 and the output terminal 416 of the second meandered-shaped reflector414 of the thermal sensing acoustic wave resonator 12, while the inputterminal 21′ can be connected to the other.

Please refer to FIG. 3E. The conversion circuit 23 comprises a DC source201, a switching transistor 202, a pulse generator 203, a diode 204, aninductor 205 and a capacitor 206. A first terminal of the switchingtransistor 202 is connected to the DC source 201. A third terminal ofthe switching transistor 202 is connected to the pulse generator 203. Asecond terminal of the switching transistor 202 is connected to acathode terminal of the diode 204 and a first terminal of the inductor205. A second terminal of the inductor 205 is connected to the outputterminal of the conversion circuit 23 and a first terminal of thecapacitor 206. The input terminal 21 is connected to a ground and ananode terminal of the diode 204. The input terminal 21′ is connected tothe ground and a second terminal of the capacitor 206. Therefore, afirst thermal sensor (a thermal sensitive resistance sensor or a thirdtype of the thermal sensing acoustic wave resonator 12) can be connectedto the input terminal 21 and a second thermal sensor (a thermalsensitive resistance sensor or a third type of the thermal sensingacoustic wave resonator 12) can be connected to the input terminal 21′.The output terminal of the conversion circuit 23 outputs a convertedcircuit signal to the bias adjustment circuit 20 through the inputterminal of the bias adjustment circuit 20. A variation of the convertedcircuit signal is correlated to a resistance variation of the thermalsensor (which is correlated to the thermal variation). The biasadjustment circuit 20 adjusts the converted circuit signal received fromthe output terminal of the conversion circuit 23 and outputs an activethermal compensating signal through an output terminal 22 of the activeadjustment circuit 32.

The main structure of the embodiment of FIG. 3F is basically the same asthe structure of the embodiment of FIG. 3D, except that the activeadjustment circuit 32 further comprises an input terminal 21′, the inputterminal 21′ is connected to the ground and a junction of the secondterminal of the inductor 205, the output terminal of the conversioncircuit 23 and the second terminal of the capacitor 206. A secondthermal sensor (a thermal sensitive resistance sensor or a third type ofthe thermal sensing acoustic wave resonator 12) can be connected to theinput terminal 21′.

The main structure of the embodiment of FIG. 3G is basically the same asthe structure of the embodiment of FIG. 3B, except that the secondterminal of the capacitor 206 is not grounded, the active adjustmentcircuit 32 further comprises an input terminal 21′, the input terminal21′ is connected to the ground and the second terminal of the capacitor206. A second thermal sensor (a thermal sensitive resistance sensor or athird type of the thermal sensing acoustic wave resonator 12 can beconnected to the input terminal 21′.

The main structure of the embodiment of FIG. 3H is basically the same asthe structure of the embodiment of FIG. 3B, except that the activeadjustment circuit 32 further comprises an input terminal 21′, the inputterminal 21′ is connected to the ground and a junction of the cathodeterminal of the diode 204, the output terminal of the conversion circuit23 and the second terminal of the capacitor 206. A second thermal sensor(a thermal sensitive resistance sensor or a third type of the thermalsensing acoustic wave resonator 12) can be connected to the inputterminal 21′.

An integrated module of acoustic wave device with active thermalcompensation comprises at least one acoustic wave device, at least onethermal sensor, at least one variable reactance device and at least oneactive adjustment circuit 32. Please refer to FIG. 4A, which shows theschematic view of an embodiment of an integrated module of acoustic wavedevice with active thermal compensation of the present invention. Anintegrated module 3 comprises an acoustic wave device 11, a thermalsensor 16(12), a variable reactance device 33 and an active adjustmentcircuit 32. The thermal sensor 16(12) is connected to the activeadjustment circuit 32. The active adjustment circuit 32 is connected tothe variable reactance device 33. The variable reactance device 33 isconnected to the acoustic wave device 11 (the current embodiment is anapplication of a thermal sensor integrated with acoustic wave device ofthe present invention as shown in FIGS. 1A and 1D). In some embodiments,the thermal sensor 16(12) and the acoustic wave device 11 are formed ona first substrate (the same as the structure shown in FIG. 1A), whereinthe material of the first substrate is one material selected from thegroup consisting of glass, LiTaO₃, LiNbO₃, quartz, Si, GaAs, GaP,sapphire, Al₂O₃, InP, SiC, diamond, GaN and AlN. In some embodiments,the thermal sensor 16 includes at least one selected from the groupconsisting of a sensing capacitance variation type thermal sensor, asensing resistance variation type thermal sensor, a sensing inductancevariation type thermal sensor, a sensing current variation type thermalsensor, a sensing voltage variation type thermal sensor and a sensingresonance frequency variation type thermal sensor. In some otherembodiments, the thermal sensor 16(12) may be a first type, a secondtype or a third type of the thermal sensing acoustic wave resonator 12,or a thermal sensitive resistance sensor, a thermal sensitive diodesensor, a thermal sensitive transistor sensor or a thermal sensitivecapacitor sensor. The active adjustment circuit 32 of the embodimentsshown in FIGS. 2B˜2D, 2M, 2N, 2R˜2T and 3A˜3H are suitable for a thermalsensitive resistance sensor or a third type of the thermal sensingacoustic wave resonator 12 (the first meandered-shaped reflector 413 orthe second meandered-shaped reflector 414 as shown in FIG. 1B). Theactive adjustment circuit 32 of the embodiments shown in FIGS. 2I, 2Jand 2M˜2P are suitable for a thermal sensitive capacitor sensor, or afirst type or a second type of the thermal sensing acoustic waveresonator 12. The active adjustment circuit 32 of the embodiments shownin FIGS. 2E˜2G and 2K˜2P are suitable for a thermal sensitive diodesensor. The active adjustment circuit 32 of the embodiments shown inFIGS. 2U˜2W are suitable for a thermal sensitive transistor sensor. Insome embodiments, the acoustic wave device 11 comprises at least oneacoustic wave resonator. In some other embodiments, the acoustic wavedevice 11 comprises at least one acoustic wave filter, wherein each ofthe at least one acoustic wave filter comprises at least one acousticwave resonator. In some embodiments, the acoustic wave device 11comprises at least one acoustic wave duplexer, wherein each of the atleast one acoustic wave duplexer comprises at least one acoustic wavefilter, wherein each of the at least one acoustic wave filter comprisesat least one acoustic wave resonator. In some other embodiments, theacoustic wave device 11 comprises at least one acoustic wave diplexer,wherein each of the at least one acoustic wave diplexer comprises atleast one acoustic wave filter, wherein each of the at least oneacoustic wave filter comprises at least one acoustic wave resonator. Insome embodiments, the variable reactance device 33 may be a variablecapacitance device. In some other embodiments, the variable reactancedevice 33 is a variable capacitance device, wherein the variablecapacitance device comprises at least one variable capacitor. In someother embodiments, the variable reactance device 33 is a variablecapacitance device, wherein the variable capacitance device comprises atleast one varactor. In some embodiments, the variable reactance device33 may be a variable inductance device. In some other embodiments, thevariable reactance device 33 is a variable inductance device, whereinthe variable inductance device comprises at least one variable inductor.In some embodiments, the variable reactance device 33 may furtherinclude a resistor. In some embodiments, the variable reactance device33 may be a variable capacitor, a variable inductor, a combination of avariable capacitor and a variable inductor, a combination of a variablecapacitor and a resistor, a combination of a variable inductor and aresistor, or a combination of a variable capacitor, a variable inductorand a resistor. In some embodiments, the active adjustment circuit 32and the variable reactance device 33 are formed on a circuit substrate(not shown in the Figure). In some other embodiments, the acoustic wavedevice 11, the thermal sensor 16(12), the active adjustment circuit 32and the variable reactance device 33 are formed on the first substrate.

In some other embodiments, the acoustic wave device 11 is formed on afirst substrate, while the thermal sensor 16(12) is formed on a secondsubstrate (the same as the structure shown in FIG. 1D), wherein thematerial of the first substrate is one material selected from the groupconsisting of glass, LiTaO₃, LiNbO₃, quartz, Si, GaAs, GaP, sapphire,Al₂O₃, InP, SiC, diamond, GaN and AlN, wherein the material of thesecond substrate is one material selected from the group consisting ofglass, LiTaO₃, LiNbO₃, quartz, Si, GaAs, GaP, sapphire, Al₂O₃, InP, SiC,diamond, GaN and AlN. In some embodiments, the second substrate 13 maybe positioned close to the first substrate 10. In some embodiments, thesecond substrate 13 may be bonded with the first substrate 10. In someembodiments, the acoustic wave device 11, the active adjustment circuit32 and the variable reactance device 33 are formed on the firstsubstrate, while the thermal sensor 16(12) is formed on the secondsubstrate.

Please refer to FIG. 4B, which shows the schematic view of an embodimentof an integrated module of acoustic wave device with active thermalcompensation of the present invention. The main structure is mostlysimilar to the structure of the embodiment shown in FIG. 4A, except thatthe acoustic wave device 11 is formed on the first substrate 10 whilethe thermal sensor 16(12) is formed on a second substrate 13, whereinthe second substrate 13 and the first substrate 10 are stacked with eachother, wherein each of at least one metal pillars 14 are formed on oneof the first substrate 10 and the second substrate 13 and connected withthe other (the same as the structure shown in FIG. 1E).

Please refer to FIG. 4C, which shows the schematic view of an embodimentof an integrated module of acoustic wave device with active thermalcompensation of the present invention. The main structure is mostlysimilar to the structure of the embodiment shown in FIG. 4A, except thatthe thermal sensing acoustic wave resonator 12 is a part of the acousticwave device 11 (the acoustic wave device 11 comprises the thermalsensing acoustic wave resonator 12) and the thermal sensing acousticwave resonator 12 plays dual roles of thermal sensing and acoustic wavefiltering (similar applications please also refer to the embodimentsshown in FIGS. 1I and 1J). The thermal sensing acoustic wave resonator12 may be a first type, a second type or a third type of the thermalsensing acoustic wave resonator 12.

Please refer to FIG. 4D, which shows the schematic view of an embodimentof an integrated module of acoustic wave device with active thermalcompensation of the present invention. The main structure is mostlysimilar to the structure of the embodiment shown in FIG. 4A, except thatit further comprises a power amplifier 34, a low noise amplifier 35 andan antenna 36. The power amplifier 34, the low noise amplifier 35 andthe antenna 36 are connected to the acoustic wave device 11. In someembodiments, the power amplifier 34 and the low noise amplifier 35 areformed on an amplifier substrate. In some other embodiments, the activeadjustment circuit 32, the variable reactance device 33, the poweramplifier 34 and the low noise amplifier 35 are formed on a circuitsubstrate. In some embodiment, the acoustic wave device 11, the activeadjustment circuit 32, the variable reactance device 33, the poweramplifier 34 and the low noise amplifier 35 are formed on the firstsubstrate.

Please refer to FIG. 4E, which shows the schematic view of an embodimentof an integrated module of acoustic wave device with active thermalcompensation of the present invention. The main structure is mostlysimilar to the structure of the embodiment shown in FIG. 4B, except thatit further comprises a power amplifier 34 and a low noise amplifier 35.The power amplifier 34 and the low noise amplifier 35 are connected tothe acoustic wave device 11. In some embodiments, power amplifier 34 andthe low noise amplifier 35 are formed on an amplifier substrate. In someother embodiments, the active adjustment circuit 32, the variablereactance device 33, the power amplifier 34 and the low noise amplifier35 are formed on a circuit substrate. In some embodiment, the acousticwave device 11, the active adjustment circuit 32, the variable reactancedevice 33, the power amplifier 34 and the low noise amplifier 35 areformed on the first substrate.

Please refer to FIG. 4F, which shows the schematic view of an embodimentof an integrated module of acoustic wave device with active thermalcompensation of the present invention. The main structure is mostlysimilar to the structure of the embodiment shown in FIG. 4E, except thatit further comprises an antenna 36. The antenna 36 is connected to theacoustic wave device 11.

Please refer to FIG. 4G, which shows the schematic view of an embodimentof an integrated module of acoustic wave device with active thermalcompensation of the present invention. The main structure is mostlysimilar to the structure of the embodiment shown in FIG. 4C, except thatit further comprises a power amplifier 34 and a low noise amplifier 35.The power amplifier 34 and the low noise amplifier 35 are connected tothe acoustic wave device 11. In some embodiments, power amplifier 34 andthe low noise amplifier 35 are formed on an amplifier substrate. In someother embodiments, the active adjustment circuit 32, the variablereactance device 33, the power amplifier 34 and the low noise amplifier35 are formed on a circuit substrate. In some embodiment, the acousticwave device 11, the active adjustment circuit 32, the variable reactancedevice 33, the power amplifier 34 and the low noise amplifier 35 areformed on the first substrate.

Please refer to FIG. 4H, which shows the schematic view of an embodimentof an integrated module of acoustic wave device with active thermalcompensation of the present invention. The main structure is mostlysimilar to the structure of the embodiment shown in FIG. 4G except thatit further comprises an antenna 36. The antenna 36 is connected to theacoustic wave device 11.

The present invention further provides an active thermal compensatingmethod for an integrated module of acoustic wave device with activethermal compensation. The active thermal compensating method for theembodiments of FIGS. 4A, 4B and 4D˜4F comprises following steps of:sensing a thermal variation by a thermal sensor 16(12); and outputtingan active thermal compensating signal to the variable reactance device33 by the active adjustment circuit 32, wherein the active thermalcompensating signal is correlated to the thermal variation, wherein theactive thermal compensating signal induces a physical property variationof the variable reactance device 33 such that the physical propertyvariation of the variable reactance device 33 compensates the impact ofthe thermal variation to the acoustic wave device 11. The active thermalcompensating method for the embodiments of FIGS. 4C, 4G and 4H comprisesfollowing steps of: sensing a thermal variation by a thermal sensingacoustic wave resonator 12; and outputting an active thermalcompensating signal to the variable reactance device 33 by the activeadjustment circuit 32, wherein the active thermal compensating signal iscorrelated to the thermal variation, wherein the active thermalcompensating signal induces a physical property variation of thevariable reactance device 33 such that the physical property variationof the variable reactance device 33 compensates the impact of thethermal variation to the acoustic wave device 11. In some embodiments,the physical property variation includes at least one selected from thegroup consisting of a capacitance variation, a resistance variation, aninductance variation, a current variation and a voltage variation and aresonance frequency variation.

Please refer to FIG. 5A, which shows the schematic view of an embodimentof an integrated module of acoustic wave device with active thermalcompensation of the present invention (the current embodiment is anapplication of the embodiment of FIG. 4C). The main structure of theintegrated module 3 comprises an acoustic wave device 11, an activeadjustment circuit 32 and a variable reactance device 33. The acousticwave device 11 is formed on a substrate, wherein the material of thesubstrate is one material selected from the group consisting of glass,LiTaO₃, LiNbO₃, quartz, Si, GaAs, GaP, sapphire, Al₂O₃, InP, SiC,diamond, GaN and AlN. In current embodiment, the acoustic wave device 11is an acoustic wave filter. The acoustic wave filter comprises a thermalsensing acoustic wave resonator 501(12), first acoustic wave resonators502, 503 and 504 and second acoustic wave resonators 511, 512 and 513.The first acoustic wave resonators 502, 503 and 504 are series acousticwave resonators of the acoustic wave filter. The second acoustic waveresonators 511, 512 and 513 are shunt acoustic wave resonators of theacoustic wave filter. The thermal sensing acoustic wave resonator501(12) is a third type of the thermal sensing acoustic wave resonator12. The thermal sensing acoustic wave resonator 501(12) comprises afirst meandered-shaped reflector 413(which plays a role of thermalsensing), a second meandered-shaped reflector 414(which plays a role ofthermal sensing) and two interlocking comb-shaped electrodes 411, 412 ofan interdigital transducer 410. The two meandered-shaped reflectors 413,414 are formed respectively at two sides of the two interlockingcomb-shaped electrodes 411, 412 of the interdigital transducer 410. Thethermal sensing acoustic wave resonator 501(12) further comprises anoutput terminal 415 of the first meandered-shaped reflector 413 and anoutput terminal 416 of the second meandered-shaped reflector 414. Incurrent embodiment, the thermal sensing acoustic wave resonator 501(12)is a thermal sensor and also a series acoustic wave resonator of theacoustic wave filter. The thermal sensing acoustic wave resonator501(12) plays dual roles of thermal sensing and acoustic wave filtering.The thermal sensing acoustic wave resonator 501(12) senses a thermalvariation correlated to a resistance variation of the thermal sensingacoustic wave resonator 501(12). The second acoustic wave resonators511, 512 and 513, and the first acoustic wave resonators 502, 503 and504 are surface acoustic wave resonators. The thermal sensing acousticwave resonator 501(12) and the three first acoustic wave resonators 502,503 and 504 are connected in series. Two terminals of the secondacoustic wave resonator 511 are connected respectively to a ground and ajunction between the thermal sensing acoustic wave resonator 501(12) andthe first acoustic wave resonator 502. Two terminals of the secondacoustic wave resonator 512 are connected respectively to the ground anda junction between the first acoustic wave resonators 502 and 503. Twoterminals of the second acoustic wave resonator 513 are connectedrespectively to the ground and a junction between the first acousticwave resonators 503 and 504. The active adjustment circuit 32 comprisesinput terminals 21, 21′, a conversion circuit 23, a bias adjustmentcircuit 20 and an output terminal 22. The input terminal 21 and theinput terminal 21′ are connected to the conversion circuit 23. An outputterminal of the conversion circuit 23 is connected to an input terminalof the bias adjustment circuit 20. The bias adjustment circuit 20 isconnected to the output terminal 22. The active adjustment circuit 32may be one of the active adjustment circuits 32 shown in FIGS. 3E˜3H.The output terminal 415 of the first meandered-shaped reflector 413 ofthe thermal sensing acoustic wave resonator 501(12) is connected inparallel to the input terminal 21 of the active adjustment circuit 32.The output terminal 416 of the second meandered-shaped reflector 414 ofthe thermal sensing acoustic wave resonator 501(12) is connected inparallel to the input terminal 21′ of the active adjustment circuit 32.In current embodiment, the variable reactance device 33 is a variablecapacitance device, wherein the variable capacitance device comprises avaractor 331, a varactor 332 and a varactor 333. The varactor 331comprises a varactor input terminal connected to the output terminal 22of the active adjustment circuit 32, and the varactor 331 is connectedin parallel to the shunt acoustic wave resonator 511. The varactor 332comprises a varactor input terminal connected to the output terminal 22of the active adjustment circuit 32, and the varactor 332 is connectedin parallel to the shunt acoustic wave resonator 512. The varactor 333comprises a varactor input terminal connected to the output terminal 22of the active adjustment circuit 32, and the varactor 333 is connectedin parallel to the shunt acoustic wave resonator 513. Each of thevaractor 331, the varactor 332 and the varactor 333 receivesrespectively an active thermal compensating signal from the activeadjustment circuit 32, wherein the active thermal compensating signal iscorrelated to the thermal variation. And the active thermal compensatingsignal induces a varactor capacitance variation of each of the varactor331, the varactor 332 and the varactor 333 such that the varactorcapacitance variation of each of the varactor 331, the varactor 332 andthe varactor 333 compensates the impact of the thermal variation to theacoustic wave device 11. In some embodiments, the active adjustmentcircuit 32 and the variable reactance device 33 are formed on a circuitsubstrate (not shown in the Figure). In some other embodiments, theacoustic wave device 11, the thermal sensing acoustic wave resonator501(12), the active adjustment circuit 32 and the variable reactancedevice 33 are formed on the same substrate. In some embodiments, thelocation of the thermal sensing acoustic wave resonator 501(12) may beinterchanged with any one of the three first acoustic wave resonators502, 503 and 504. For example, in some embodiments, the location of thethermal sensing acoustic wave resonator 501(12) is interchanged with thefirst acoustic wave resonator 503. Therefore, the new order becomes: thefirst acoustic wave resonator 503, the first acoustic wave resonator502, the thermal sensing acoustic wave resonator 501(12), the firstacoustic wave resonator 504.

Please refer to FIG. 5B, which shows the schematic view of an embodimentof an integrated module of acoustic wave device with active thermalcompensation of the present invention (the current embodiment is anapplication of the embodiment of FIG. 4C). The main structure of theembodiment of FIG. 5B is basically the same as the structure of theembodiment of FIG. 5A, except that the thermal sensing acoustic waveresonator 501(12) does not comprises the second meandered-shapedreflector 414 and the output terminal 416 and the active adjustmentcircuit 32 does not comprises the output terminal 22′. The activeadjustment circuit 32 may be one of the active adjustment circuits 32shown in FIGS. 3A˜3H. In some other embodiments, the active adjustmentcircuit 32 may be one of the active adjustment circuits 32 shown inFIGS. 2M, 2N and 2R˜2T.

Please refer to FIG. 5C, which shows the schematic view of an embodimentof an integrated module of acoustic wave device with active thermalcompensation of the present invention (the current embodiment is anapplication of the embodiment of FIG. 4C). The main structure of theintegrated module 3 comprises an acoustic wave device 11, an activeadjustment circuit 32 and a variable reactance device 33. The acousticwave device 11 is formed on a substrate, wherein the material of thesubstrate is one material selected from the group consisting of glass,LiTaO₃, LiNbO₃, quartz, Si, GaAs, GaP, sapphire, Al₂O₃, InP, SiC,diamond, GaN and AlN. In current embodiment, the acoustic wave device 11is an acoustic wave filter. The acoustic wave filter comprises a thermalsensing acoustic wave resonator 511(12), first acoustic wave resonators501, 502, 503 and 504 and second acoustic wave resonators 512 and 513.The first acoustic wave resonators 501, 502, 503 and 504 are seriesacoustic wave resonators of the acoustic wave filter. The secondacoustic wave resonators 512 and 513 are shunt acoustic wave resonatorsof the acoustic wave filter. The thermal sensing acoustic wave resonator511(12) is a third type of the thermal sensing acoustic wave resonator12. The thermal sensing acoustic wave resonator 511(12) comprises afirst meandered-shaped reflector 413(which plays a role of thermalsensing), a second meandered-shaped reflector 414(which plays a role ofthermal sensing) and two interlocking comb-shaped electrodes 411, 412 ofan interdigital transducer 410. The two meandered-shaped reflectors 413,414 are formed respectively at two sides of the two interlockingcomb-shaped electrodes 411, 412 of the interdigital transducer 410. Thethermal sensing acoustic wave resonator 511(12) further comprises anoutput terminal 415 of the first meandered-shaped reflector 413 and anoutput terminal 416 of the second meandered-shaped reflector 414. Incurrent embodiment, the thermal sensing acoustic wave resonator 511(12)is a thermal sensor and also a shunt acoustic wave resonator of theacoustic wave filter. The thermal sensing acoustic wave resonator511(12) plays dual roles of thermal sensing and acoustic wave filtering.The thermal sensing acoustic wave resonator 511(12) senses a thermalvariation correlated to a resistance variation of the thermal sensingacoustic wave resonator 511(12). The second acoustic wave resonators 512and 513, and the first acoustic wave resonators 501, 502, 503 and 504are surface acoustic wave resonators. The thermal sensing acoustic waveresonator 511(12) and the four first acoustic wave resonators 501, 502,503 and 504 are connected in series. Two terminals of the thermalsensing acoustic wave resonator 511(12) are connected respectively to aground and a junction between the first acoustic wave resonators 501 and502. Two terminals of the second acoustic wave resonator 512 areconnected respectively to the ground and a junction between the firstacoustic wave resonators 502 and 503. Two terminals of the secondacoustic wave resonator 513 are connected respectively to the ground anda junction between the first acoustic wave resonators 503 and 504. Theactive adjustment circuit 32 comprises input terminals 21, 21′, aconversion circuit 23, a bias adjustment circuit 20 and an outputterminal 22. The input terminal 21 and the input terminal 21′ areconnected to the conversion circuit 23. An output terminal of theconversion circuit 23 is connected to an input terminal of the biasadjustment circuit 20. The bias adjustment circuit 20 is connected tothe output terminal 22. The active adjustment circuit 32 may be one ofthe active adjustment circuits 32 shown in FIGS. 3E˜3H. The outputterminal 415 of the first meandered-shaped reflector 413 of the thermalsensing acoustic wave resonator 511(12) is connected in parallel to theinput terminal 21 of the active adjustment circuit 32. The outputterminal 416 of the second meandered-shaped reflector 414 of the thermalsensing acoustic wave resonator 511(12) is connected in parallel to theinput terminal 21′ of the active adjustment circuit 32. In currentembodiment, the variable reactance device 33 is a variable capacitancedevice, wherein the variable capacitance device comprises a varactor331, a varactor 332 and a varactor 333. The varactor 331 comprises avaractor input terminal connected to the output terminal 22 of theactive adjustment circuit 32, and the varactor 331 is connected inparallel to the shunt acoustic wave resonator 511(12). The varactor 332comprises a varactor input terminal connected to the output terminal 22of the active adjustment circuit 32, and the varactor 332 is connectedin parallel to the shunt acoustic wave resonator 512. The varactor 333comprises a varactor input terminal connected to the output terminal 22of the active adjustment circuit 32, and the varactor 333 is connectedin parallel to the shunt acoustic wave resonator 513. Each of thevaractor 331, the varactor 332 and the varactor 333 receivesrespectively an active thermal compensating signal from the activeadjustment circuit 32, wherein the active thermal compensating signal iscorrelated to the thermal variation. And the active thermal compensatingsignal induces a varactor capacitance variation of each of the varactor331, the varactor 332 and the varactor 333 such that the varactorcapacitance variation of each of the varactor 331, the varactor 332 andthe varactor 333 compensates the impact of the thermal variation to theacoustic wave device 11. In some embodiments, the location of thethermal sensing acoustic wave resonator 511(12) may be interchanged withany one of the two shunt acoustic wave resonators 512 and 513. Forexample, in some embodiments, the location of the thermal sensingacoustic wave resonator 511(12) is interchanged with the shunt acousticwave resonator 513. Therefore, the new order becomes: the shunt acousticwave resonator 513, the shunt acoustic wave resonator 512, the thermalsensing acoustic wave resonator 511(12).

Please refer to FIG. 5D, which shows the schematic view of an embodimentof an integrated module of acoustic wave device with active thermalcompensation of the present invention (the current embodiment is also anapplication of the embodiment of FIG. 4C). The main structure of theembodiment of FIG. 5D is basically the same as the structure of theembodiment of FIG. 5C, except that the thermal sensing acoustic waveresonator 511(12) does not comprises the second meandered-shapedreflector 414 and the output terminal 416 and the active adjustmentcircuit 32 does not comprises the output terminal 22′. The activeadjustment circuit 32 may be one of the active adjustment circuits 32shown in FIGS. 3A˜3H.

Please refer to FIG. 5E, which shows the schematic view of an embodimentof an integrated module of acoustic wave device with active thermalcompensation of the present invention (the current embodiment is anapplication of the embodiment of FIG. 4C). The main structure of theintegrated module 3 comprises an acoustic wave device 11, an activeadjustment circuit 32 and a variable reactance device 33. The acousticwave device 11 is formed on a substrate, wherein the material of thesubstrate is one material selected from the group consisting of glass,LiTaO₃, LiNbO₃, quartz, Si, GaAs, GaP, sapphire, Al₂O₃, InP, SiC,diamond, GaN and AlN. In current embodiment, the acoustic wave device 11is an acoustic wave filter. The acoustic wave filter comprises a thermalsensing acoustic wave resonator 511(12), second acoustic wave resonators512 and 513, and first acoustic wave resonators 501, 502, 503 and 504.The first acoustic wave resonators 501, 502, 503 and 504 are seriesacoustic wave resonators of the acoustic wave filter. The secondacoustic wave resonators 512 and 513 are shunt acoustic wave resonatorsof the acoustic wave filter. In current embodiment, the thermal sensingacoustic wave resonator 511(12) is a thermal sensor and also a shuntacoustic wave resonator of the acoustic wave filter. The thermal sensingacoustic wave resonator 511(12) plays dual roles of thermal sensing andacoustic wave filtering. The thermal sensing acoustic wave resonator511(12) senses a thermal variation correlated to a capacitance variationof the thermal sensing acoustic wave resonator 511(12). The thermalsensing acoustic wave resonator 511(12), the second acoustic waveresonators 512 and 513, and the first acoustic wave resonators 501, 502,503 and 504 may be surface acoustic wave resonators, bulk acoustic waveresonators or thin film bulk acoustic wave resonators. The four firstacoustic wave resonators 501, 502, 503 and 504 are connected in series.Two terminals of the thermal sensing acoustic wave resonator 511(12) areconnected respectively to a ground and a junction between the firstacoustic wave resonators 501 and 502. Two terminals of the secondacoustic wave resonator 512 are connected respectively to the ground anda junction between the first acoustic wave resonators 502 and 503. Twoterminals of the second acoustic wave resonator 513 are connectedrespectively to the ground and a junction between the first acousticwave resonators 503 and 504. The active adjustment circuit 32 comprisesan input terminal 21, a conversion circuit 23, a bias adjustment circuit20 and an output terminal 22. The input terminal 21 is connected to theconversion circuit 23. An output terminal of the conversion circuit 23is connected to an input terminal of the bias adjustment circuit 20. Thebias adjustment circuit 20 is connected to the output terminal 22. Insome embodiments, the active adjustment circuit 32 may be one of theactive adjustment circuits 32 shown in FIGS. 2I and 2J. In some otherembodiments, the active adjustment circuit 32 may be one of the activeadjustment circuits 32 shown in FIGS. 2M˜2P. The thermal sensingacoustic wave resonator 511(12) is connected in parallel to the inputterminal 21 of the active adjustment circuit 32. In current embodiment,the variable reactance device 33 is a variable capacitance device,wherein the variable capacitance device comprises a varactor 331 and avaractor 332. The varactor 331 comprises a varactor input terminalconnected to the output terminal 22 of the active adjustment circuit 32,and the varactor 331 is connected in parallel to the shunt acoustic waveresonator 512. The varactor 332 also comprises a varactor input terminalconnected to the output terminal 22 of the active adjustment circuit 32,and the varactor 332 is connected in parallel to the shunt acoustic waveresonator 513. Each of the varactor 331 and the varactor 332 receivesrespectively an active thermal compensating signal from the activeadjustment circuit 32, wherein the active thermal compensating signal iscorrelated to the thermal variation. And the active thermal compensatingsignal induces a varactor capacitance variation of each of the varactor331 and the varactor 332 such that the varactor capacitance variation ofeach of the varactor 331 and the varactor 332 compensates the impact ofthe thermal variation to the acoustic wave device 11. In someembodiments, the location of the thermal sensing acoustic wave resonator511(12) may be interchanged with any one of the two shunt acoustic waveresonators 512 and 513. For example, in some embodiments, the locationof the thermal sensing acoustic wave resonator 511(12) is interchangedwith the shunt acoustic wave resonator 512. Therefore, the new orderbecomes: the shunt acoustic wave resonator 512, the thermal sensingacoustic wave resonator 511(12), the shunt acoustic wave resonator 513.

In some other embodiments, the thermal sensing acoustic wave resonator12 senses a thermal variation correlated to a resonance frequencyvariation of the thermal sensing acoustic wave resonator 12. A suitabledesign of the active adjustment circuit 32 for the thermal sensingacoustic wave resonator 12 sensing the thermal variation correlated to aresonance frequency variation of the thermal sensing acoustic waveresonator 12 is needed.

Please refer to FIG. 5F, which shows the schematic view of an embodimentof an integrated module of acoustic wave device with active thermalcompensation of the present invention (the current embodiment is anapplication of the embodiment of FIG. 4A). The main structure of theembodiment of FIG. 5F is basically the same as the structure of theembodiment of FIG. 5E, except that the thermal sensing acoustic waveresonator 511(12) is not connected to the junction between the firstacoustic wave resonators 501 and 502. Therefore, in current embodiment,the thermal sensing acoustic wave resonator 511(12) does not play a roleof acoustic wave filtering. The thermal sensing acoustic wave resonator511(12) only plays a role of thermal sensing. The thermal sensingacoustic wave resonator 511(12) is not a shunt acoustic wave resonatorof the acoustic wave filter.

Please refer to FIG. 5G, which shows the schematic view of an embodimentof an integrated module of acoustic wave device with active thermalcompensation of the present invention (the current embodiment is anapplication of the embodiment of FIG. 4A). The main structure of theembodiment of FIG. 5G is basically the same as the structure of theembodiment of FIG. 5F, except that none of the two terminals of thethermal sensing acoustic wave resonator 511(12) is connected to theground. The thermal sensing acoustic wave resonator 511(12) is onlyconnected in parallel to the input terminal 21 of the active adjustmentcircuit 32.

Please refer to FIG. 5H, which shows the schematic view of an embodimentof an integrated module of acoustic wave device with active thermalcompensation of the present invention (the current embodiment is anapplication of the embodiment of FIG. 4A or FIG. 4B). The main structureof the integrated module 3 comprises an acoustic wave device 11, athermal sensor 16, an active adjustment circuit 32 and a variablereactance device 33. In current embodiment, the acoustic wave device 11is an acoustic wave filter. The acoustic wave filter comprises aplurality of second acoustic wave resonators 511, 512 and 513, and aplurality of first acoustic wave resonators 501, 502, 503 and 504. Thefirst acoustic wave resonators 501, 502, 503 and 504 are series acousticwave resonators of the acoustic wave filter. The second acoustic waveresonators 511, 512 and 513 are shunt acoustic wave resonators of theacoustic wave filter. The second acoustic wave resonators 511, 512 and513, and the first acoustic wave resonators 501, 502, 503 and 504 may besurface acoustic wave resonators, bulk acoustic wave resonators or thinfilm bulk acoustic wave resonators. The four first acoustic waveresonators 501, 502, 503 and 504 are connected in series. Two terminalsof the second acoustic wave resonator 511 are connected respectively toa ground and a junction between the first acoustic wave resonators 501and 502. Two terminals of the second acoustic wave resonator 512 areconnected respectively to the ground and a junction between the firstacoustic wave resonators 502 and 503. Two terminals of the secondacoustic wave resonator 513 are connected respectively to the ground anda junction between the first acoustic wave resonators 503 and 504. Theactive adjustment circuit 32 comprises an input terminal 21, aconversion circuit 23, a bias adjustment circuit 20 and an outputterminal 22. The input terminal 21 is connected to the conversioncircuit 23. An output terminal of the conversion circuit 23 is connectedto an input terminal of the bias adjustment circuit 20. The biasadjustment circuit 20 is connected to the output terminal 22. Thethermal sensor 16 is connected in parallel to the input terminal 21 ofthe active adjustment circuit 32. In some embodiments, the thermalsensor 16 is a thermal sensitive resistance sensor or a third type ofthe thermal sensing acoustic wave resonator 12. The active adjustmentcircuit 32 may be one of the active adjustment circuits 32 shown inFIGS. 2B˜2D, 2R˜2T and 3A˜3H. In some other embodiments, the thermalsensor 16 is a thermal sensitive capacitor sensor, or a first type or asecond type of the thermal sensing acoustic wave resonator 12. Theactive adjustment circuit 32 may be one of the active adjustmentcircuits 32 shown in FIGS. 2I, 2J and 2M˜2P. In some other embodiments,the thermal sensor 16 is a thermal sensitive diode sensor. The activeadjustment circuit 32 may be one of the active adjustment circuits 32shown in FIGS. 2E˜2G and 2K˜2P. In some other embodiments, the thermalsensor 16 is a thermal sensitive transistor sensor. The activeadjustment circuit 32 may be one of the active adjustment circuits 32shown in FIGS. 2U˜2W. In current embodiment, the variable reactancedevice 33 is a variable capacitance device, wherein the variablecapacitance device comprises a varactor 331, a varactor 332 and avaractor 333. The varactor 331 comprises a varactor input terminalconnected to the output terminal 22 of the active adjustment circuit 32,and the varactor 331 is connected in parallel to the shunt acoustic waveresonator 511. The varactor 332 comprises a varactor input terminalconnected to the output terminal 22 of the active adjustment circuit 32,and the varactor 332 is connected in parallel to the shunt acoustic waveresonator 512. The varactor 333 comprises a varactor input terminalconnected to the output terminal 22 of the active adjustment circuit 32,and the varactor 333 is connected in parallel to the shunt acoustic waveresonator 513. Each of the varactor 331, the varactor 332 and thevaractor 333 receives respectively an active thermal compensating signalfrom the active adjustment circuit 32, wherein the active thermalcompensating signal is correlated to the thermal variation. And theactive thermal compensating signal induces a varactor capacitancevariation of each of the varactor 331, the varactor 332 and the varactor333 such that the varactor capacitance variation of each of the varactor331, the varactor 332 and the varactor 333 compensates the impact of thethermal variation to the acoustic wave device 11. The acoustic wavedevice 11 is formed on a first substrate (not shown in the Figure),wherein the material of the first substrate is one material selectedfrom the group consisting of glass, LiTaO₃, LiNbO₃, quartz, Si, GaAs,GaP, sapphire, Al₂O₃, InP, SiC, diamond, GaN and AlN. In someembodiments, the thermal sensor 16 may be formed on the first substrate(an application of the embodiment of FIG. 4A). In some otherembodiments, the thermal sensor 16 may be formed on a second substrate(an application of the embodiment of FIG. 4B). In some embodiments, thematerial of the second substrate is one material selected from the groupconsisting of glass, LiTaO₃, LiNbO₃, quartz, Si, GaAs, GaP, sapphire,Al₂O₃, InP, SiC, diamond, GaN and AlN. In some embodiments, the thermalsensor 16 may be a thermal sensing acoustic wave resonator 12, whereinthe thermal sensing acoustic wave resonator 12 is one of a surfaceacoustic wave resonator, a bulk acoustic wave resonator and a thin filmbulk acoustic wave resonator, wherein the thermal sensing acoustic waveresonator 12 senses a thermal variation correlated to a capacitancevariation of the thermal sensing acoustic wave resonator 12. In someother embodiments, the thermal sensor 16 may be a third type of thethermal sensing acoustic wave resonator 12.

The present invention further provides an active thermal compensatingmethod for an integrated module of acoustic wave device with activethermal compensation of one of the embodiments shown in FIGS. 5A˜5D. Theactive thermal compensating method comprises following steps of: sensinga thermal variation by at least one of the first meandered-shapedreflector 413 and the second meandered-shaped reflector 414; andoutputting an active thermal compensating signal to the varactor 331,the varactor 332 and the varactor 333 by an active adjustment circuit32, wherein the active thermal compensating signal is correlated to thethermal variation, wherein the active thermal compensating signalinduces a varactor capacitance variation of each of the varactor 331,the varactor 332 and the varactor 333 such that the varactor capacitancevariation of each of the varactor 331, the varactor 332 and the varactor333 compensates the impact of the thermal variation to the acoustic wavedevice 11.

The present invention further provides an active thermal compensatingmethod for an integrated module of acoustic wave device with activethermal compensation of one of the embodiments shown in FIGS. 5E˜5H. Theactive thermal compensating method comprises following steps of: sensinga thermal variation by the thermal sensing acoustic wave resonator511(12) (thermal sensor 16 in the embodiment of FIG. 5H); and outputtingan active thermal compensating signal to the varactor 331 and thevaractor 332 (and the varactor 333 in the embodiment of FIG. 5H) by anactive adjustment circuit 32, wherein the active thermal compensatingsignal is correlated to the thermal variation, wherein the activethermal compensating signal induces a varactor capacitance variation ofeach of the varactor 331 and the varactor 332 (and the varactor 333 inthe embodiment of FIG. 5H) such that the varactor capacitance variationof each of the varactor 331 and the varactor 332 (and the varactor 333in the embodiment of FIG. 5H) compensates the impact of the thermalvariation to the acoustic wave device 11.

Please refer to FIG. 5I, which shows the schematic view of an embodimentof an integrated module of acoustic wave device with active thermalcompensation of the present invention. The main structure of theintegrated module 3 comprises an acoustic wave device 11, a first activeadjustment circuit 32, a second active adjustment circuit 32′, a firstvariable reactance device 33, a second variable reactance device 33′, apower amplifier 34, a low noise amplifier 35 and an antenna 36. Theacoustic wave device 11 is formed on a first substrate (not shown in theFigure), wherein the material of the first substrate is one materialselected from the group consisting of glass, LiTaO₃, LiNbO₃, quartz, Si,GaAs, GaP, sapphire, Al₂O₃, InP, SiC, diamond, GaN and AlN. In currentembodiment, the acoustic wave device 11 is an acoustic wave duplexer.The acoustic wave duplexer comprises a receiver acoustic wave filter 51and a transmitter acoustic wave filter 52. The receiver acoustic wavefilter 51 comprises a first thermal sensing acoustic wave resonator511(12), second acoustic wave resonators 512 and 513, and first acousticwave resonators 501, 502, 503 and 504. The first acoustic waveresonators 501, 502, 503 and 504 are series acoustic wave resonators ofthe receiver acoustic wave filter 51. The second acoustic waveresonators 512 and 513 are shunt acoustic wave resonators of thereceiver acoustic wave filter 51. In current embodiment, the firstthermal sensing acoustic wave resonator 511(12) is a thermal sensor andalso a shunt acoustic wave resonator of the receiver acoustic wavefilter 51. The first thermal sensing acoustic wave resonator 511(12)plays dual roles of thermal sensing and acoustic wave filtering. Thefirst thermal sensing acoustic wave resonator 511(12) senses a firstthermal variation correlated to a first capacitance variation of thefirst thermal sensing acoustic wave resonator 511(12). The first thermalsensing acoustic wave resonator 511(12), the second acoustic waveresonators 512 and 513, and the first acoustic wave resonators 501, 502,503 and 504 may be surface acoustic wave resonators, bulk acoustic waveresonators or thin film bulk acoustic wave resonators. The four firstacoustic wave resonators 501, 502, 503 and 504 are connected in series.One terminal of the first acoustic wave resonator 501 is connected tothe antenna 36. One terminal of the first acoustic wave resonator 504 isconnected to the low power amplifier 35. Two terminals of the firstthermal sensing acoustic wave resonator 511(12) are connectedrespectively to a ground and a junction between the first acoustic waveresonators 501 and 502. Two terminals of the second acoustic waveresonator 512 are connected respectively to the ground and a junctionbetween the first acoustic wave resonators 502 and 503. Two terminals ofthe second acoustic wave resonator 513 are connected respectively to theground and a junction between the first acoustic wave resonators 503 and504. The first active adjustment circuit 32 comprises a first inputterminal 21, a first conversion circuit 23, a first bias adjustmentcircuit 20 and a first output terminal 22. The first input terminal 21is connected to the first conversion circuit 23. An output terminal ofthe first conversion circuit 23 is connected to an input terminal of thefirst bias adjustment circuit 20. The first bias adjustment circuit 20is connected to the first output terminal 22. In some embodiments, thefirst active adjustment circuit 32 may be one of the active adjustmentcircuits 32 shown in FIGS. 2I and 2J. In some other embodiments, thefirst active adjustment circuit 32 may be one of the active adjustmentcircuits 32 shown in FIGS. 2M˜2P. The first thermal sensing acousticwave resonator 511(12) is connected in parallel to the first inputterminal 21 of the first active adjustment circuit 32. In currentembodiment, the first variable reactance device 33 is a variablecapacitance device which comprises a first varactor 331 and a firstvaractor 332. The first varactor 331 comprises a first varactor inputterminal connected to the first output terminal 22 of the first activeadjustment circuit 32, and the first varactor 331 is connected inparallel to the shunt acoustic wave resonator 512. The first varactor332 also comprises a first varactor input terminal connected to thefirst output terminal 22 of the first active adjustment circuit 32, andthe first varactor 332 is connected in parallel to the shunt acousticwave resonator 513. Each of the first varactor 331 and the firstvaractor 332 receives respectively a first active thermal compensatingsignal from the first active adjustment circuit 32, wherein the firstactive thermal compensating signal is correlated to the first thermalvariation. And the first active thermal compensating signal induces afirst varactor capacitance variation of each of the first varactor 331and the first varactor 332 such that the first varactor capacitancevariation of each of the first varactor 331 and the first varactor 332compensates the impact of the first thermal variation to the receiveracoustic wave filter 51 of the acoustic wave device 11. The transmitteracoustic wave filter 52 comprises a second thermal sensing acoustic waveresonator 511′(12), fourth acoustic wave resonators 512′ and 513′, andthird acoustic wave resonators 501′, 502′, 503′ and 504′. The thirdacoustic wave resonators 501′, 502′, 503′ and 504′ are series acousticwave resonators of the transmitter acoustic wave filter 52. The fourthacoustic wave resonators 512′ and 513′ are shunt acoustic waveresonators of the transmitter acoustic wave filter 52. In currentembodiment, the second thermal sensing acoustic wave resonator 511′(12)is a thermal sensor and also a shunt acoustic wave resonator of thetransmitter acoustic wave filter 52. The second thermal sensing acousticwave resonator 511′(12) plays dual roles of thermal sensing and acousticwave filtering. The second thermal sensing acoustic wave resonator511′(12) senses a second thermal variation correlated to a secondcapacitance variation of the second thermal sensing acoustic waveresonator 511′(12). The second thermal sensing acoustic wave resonator511′(12), the fourth acoustic wave resonators 512′ and 513′, and thethird acoustic wave resonators 501′, 502′, 503′ and 504′ may be surfaceacoustic wave resonators, bulk acoustic wave resonators or thin filmbulk acoustic wave resonators. The four third acoustic wave resonators501′, 502′, 503′ and 504′ are connected in series. One terminal of thethird acoustic wave resonator 501′ is connected to the power amplifier34. One terminal of the third acoustic wave resonator 504′ is connectedto the antenna 36. Two terminals of the second thermal sensing acousticwave resonator 511′(12) are connected respectively to a ground and ajunction between the third acoustic wave resonators 501′ and 502′. Twoterminals of the fourth acoustic wave resonator 512′ are connectedrespectively to the ground and a junction between the third acousticwave resonators 502′ and 503′. Two terminals of the fourth acoustic waveresonator 513′ are connected respectively to the ground and a junctionbetween the third acoustic wave resonators 503′ and 504′. The secondactive adjustment circuit 32′ comprises a second input terminal 211, asecond conversion circuit 23′, a second bias adjustment circuit 20′ anda second output terminal 22′. The second input terminal 211 is connectedto the second conversion circuit 23′. An output terminal of the secondconversion circuit 23′ is connected to an input terminal of the secondbias adjustment circuit 20′. The second bias adjustment circuit 20′ isconnected to the second output terminal 22′. In some embodiments, thesecond active adjustment circuit 32′ may be one of the active adjustmentcircuits 32′ shown in FIGS. 2I and 2J. In some other embodiments, thesecond active adjustment circuit 32′ may be one of the active adjustmentcircuits 32′ shown in FIGS. 2M˜2P. The second thermal sensing acousticwave resonator 511′(12) is connected in parallel to the second inputterminal 211 of the second active adjustment circuit 32′. In currentembodiment, the second variable reactance device 33′ comprises a secondvaractor 331′ and a second varactor 332′. The second varactor 331′comprises a second varactor input terminal connected to the secondoutput terminal 22′ of the second active adjustment circuit 32′, and thesecond varactor 331′ is connected in parallel to the shunt acoustic waveresonator 512′. The second varactor 332′ also comprises a secondvaractor input terminal connected to the second output terminal 22′ ofthe second active adjustment circuit 32′, and the second varactor 332′is connected in parallel to the shunt acoustic wave resonator 513′. Eachof the second varactor 331′ and the second varactor 332′ receivesrespectively a second active thermal compensating signal from the secondactive adjustment circuit 32′, wherein the second active thermalcompensating signal is correlated to the second thermal variation. Andthe second active thermal compensating signal induces a second varactorcapacitance variation of each of the second varactor 331′ and the secondvaractor 332′ such that the second varactor capacitance variation ofeach of the second varactor 331′ and the second varactor 332′compensates the impact of the second thermal variation to thetransmitter acoustic wave filter 52 of the acoustic wave device 11. Incurrent embodiment, both the receiver acoustic wave filter 51 and thetransmitter acoustic wave filter 52 have the same structure as theembodiment of FIG. 5E.

In some embodiments, the first active adjustment circuit 32 and thefirst variable reactance device 33 are formed on a first circuitsubstrate, while the second active adjustment circuit 32′ and the secondvariable reactance device 33′ are formed on a second circuit substrate(not shown in the Figure). In some other embodiments, the first activeadjustment circuit 32, the first variable reactance device 33, thesecond active adjustment circuit 32′ and the second variable reactancedevice 33′ are formed on a circuit substrate (not shown in the Figure).In some embodiments, the acoustic wave device 11, the first activeadjustment circuit 32 and the first variable reactance device 33 areformed on the first circuit substrate (not shown in the Figure). In someother embodiments, the acoustic wave device 11, the first activeadjustment circuit 32 and the first variable reactance device 33, thesecond active adjustment circuit 32′ and the second variable reactancedevice 33′ are formed on the first circuit substrate (not shown in theFigure). In some embodiments, the power amplifier 34 and the low noiseamplifier 35 are formed on an amplifier substrate (not shown in theFigure). In some embodiments, the first active adjustment circuit 32,the first variable reactance device 33, the power amplifier 34 and thelow noise amplifier 35 are formed on a circuit substrate (not shown inthe Figure). In some other embodiments, the first active adjustmentcircuit 32, the first variable reactance device 33, the second activeadjustment circuit 32′, the second variable reactance device 33′, thepower amplifier 34 and the low noise amplifier 35 are formed on acircuit substrate (not shown in the Figure). In some other embodiments,the acoustic wave device 11, the first active adjustment circuit 32 andthe first variable reactance device 33, the second active adjustmentcircuit 32′, the second variable reactance device 33′, the poweramplifier 34 and the low noise amplifier 35 are formed on the firstcircuit substrate (not shown in the Figure). In some other embodiments,the acoustic wave device 11, the first active adjustment circuit 32 andthe first variable reactance device 33, the power amplifier 34 and thelow noise amplifier 35 are formed on the first circuit substrate (notshown in the Figure).

Please refer to FIG. 5J, which shows the schematic view of an embodimentof an integrated module of acoustic wave device with active thermalcompensation of the present invention. The main structure of theembodiment of FIG. 5J is basically the same as the structure of theembodiment of FIG. 5I, except that a fourth acoustic wave resonator 511′does not play a role of thermal sensing, wherein the structure of theintegrated module 3 does not include the second active adjustmentcircuit 32′, wherein the second variable reactance device 33′ furthercomprises a second varactor 331′. Two terminals of the fourth acousticwave resonator 511′ are connected respectively to the ground and ajunction between the third acoustic wave resonators 501′ and 502′. Thesecond varactor 331′ comprises a second varactor input terminalconnected to the first output terminal 22 of the first active adjustmentcircuit 32, and the second varactor 331′ is connected in parallel to theshunt acoustic wave resonator 511′. The second varactor 332′ alsocomprises a second varactor input terminal connected to the first outputterminal 22 of the first active adjustment circuit 32, and the secondvaractor 332′ is connected in parallel to the shunt acoustic waveresonator 512′. The second varactor 333′ comprises a second varactorinput terminal connected to the first output terminal 22 of the firstactive adjustment circuit 32, and the second varactor 333′ is connectedin parallel to the shunt acoustic wave resonator 513′. Each of thesecond varactor 331′, the second varactor 332′ and the second varactor333′ receives respectively the first active thermal compensating signalfrom the first active adjustment circuit 32, wherein the first activethermal compensating signal is correlated to the first thermalvariation. And the first active thermal compensating signal induces asecond varactor capacitance variation of each of the second varactor331′, the second varactor 332′ and the second varactor 333′ such thatthe second varactor capacitance variation of each of the second varactor331′, the second varactor 332′ and the second varactor 333′ compensatesthe impact of the first thermal variation to the transmitter acousticwave filter 52 of the acoustic wave device 11.

Please refer to FIG. 5K, which shows the schematic view of an embodimentof an integrated module of acoustic wave device with active thermalcompensation of the present invention. The main structure of theintegrated module 3 comprises an acoustic wave device 11, a first activeadjustment circuit 32, a second active adjustment circuit 32′, a firstvariable reactance device 33, a second variable reactance device 33′, apower amplifier 34, a low noise amplifier 35 and an antenna 36. Theacoustic wave device 11 is formed on a first substrate (not shown in theFigure), wherein the material of the first substrate is one materialselected from the group consisting of glass, LiTaO₃, LiNbO₃, quartz, Si,GaAs, GaP, sapphire, Al₂O₃, InP, SiC, diamond, GaN and AlN. In currentembodiment, the acoustic wave device 11 is an acoustic wave duplexer.The acoustic wave duplexer comprises a receiver acoustic wave filter 51and a transmitter acoustic wave filter 52. The receiver acoustic wavefilter 51 comprises a first thermal sensing acoustic wave resonator501(12), second acoustic wave resonators 511, 512 and 513, and firstacoustic wave resonators 502, 503 and 504. The first acoustic waveresonators 502, 503 and 504 are series acoustic wave resonators of thereceiver acoustic wave filter 51. The second acoustic wave resonators511, 512 and 513 are shunt acoustic wave resonators of the receiveracoustic wave filter 51. The first thermal sensing acoustic waveresonator 501(12) is a third type of the thermal sensing acoustic waveresonator 12. The first thermal sensing acoustic wave resonator 501(12)comprises a first meandered-shaped reflector 413(which plays a role ofthermal sensing), a second meandered-shaped reflector 414(which plays arole of thermal sensing) and two interlocking comb-shaped electrodes411, 412 of an interdigital transducer 410. The two meandered-shapedreflectors 413, 414 are formed respectively at two sides of the twointerlocking comb-shaped electrodes 411, 412 of the interdigitaltransducer 410. The first thermal sensing acoustic wave resonator501(12) further comprises an output terminal 415 of the firstmeandered-shaped reflector 413 and an output terminal 416 of the secondmeandered-shaped reflector 414. In current embodiment, the first thermalsensing acoustic wave resonator 501(12) is a thermal sensor and also aseries acoustic wave resonator of the receiver acoustic wave filter 51.The first thermal sensing acoustic wave resonator 501(12) plays dualroles of thermal sensing and acoustic wave filtering. The first thermalsensing acoustic wave resonator 501(12) senses a first thermal variationcorrelated to a first resistance variation of the first thermal sensingacoustic wave resonator 501(12). The second acoustic wave resonators511, 512 and 513, and the first acoustic wave resonators 502, 503 and504 are surface acoustic wave resonators. The first thermal sensingacoustic wave resonator 501(12) and the three first acoustic waveresonators 502, 503 and 504 are connected in series. One terminal of thefirst acoustic wave resonator 501 is connected to the antenna 36. Oneterminal of the first acoustic wave resonator 504 is connected to thelow power amplifier 35. Two terminals of the second acoustic waveresonator 511 are connected respectively to a ground and a junctionbetween the first thermal sensing acoustic wave resonator 501(12) andthe first acoustic wave resonator 502. Two terminals of the secondacoustic wave resonator 512 are connected respectively to the ground anda junction between the first acoustic wave resonators 502 and 503. Twoterminals of the second acoustic wave resonator 513 are connectedrespectively to the ground and a junction between the first acousticwave resonators 503 and 504. The first active adjustment circuit 32comprises first input terminals 21, 21′, a first conversion circuit 23,a first bias adjustment circuit 20 and a first output terminal 22. Thefirst input terminals 21, 21′ are connected to the first conversioncircuit 23. An output terminal of the first conversion circuit 23 isconnected to an input terminal of the first bias adjustment circuit 20.The first bias adjustment circuit 20 is connected to the first outputterminal 22. In some embodiment, the first active adjustment circuit 32may be one of the active adjustment circuits 32 shown in FIGS. 3E˜3H.The output terminal 415 of the first meandered-shaped reflector 413 ofthe first thermal sensing acoustic wave resonator 501(12) is connectedin parallel to the first input terminal 21 of the first activeadjustment circuit 32. The output terminal 416 of the secondmeandered-shaped reflector 414 of the first thermal sensing acousticwave resonator 501(12) is connected in parallel to the first inputterminal 21′ of the first active adjustment circuit 32. In currentembodiment, the first variable reactance device 33 is a variablecapacitance device which comprises a first varactor 331, a firstvaractor 332 and a first varactor 333. The first varactor 331 comprisesa first varactor input terminal connected to the first output terminal22 of the first active adjustment circuit 32, and the first varactor 331is connected in parallel to the shunt acoustic wave resonator 511. Thefirst varactor 332 comprises a first varactor input terminal connectedto the first output terminal 22 of the first active adjustment circuit32, and the first varactor 332 is connected in parallel to the shuntacoustic wave resonator 512. The first varactor 333 comprises a firstvaractor input terminal connected to the first output terminal 22 of thefirst active adjustment circuit 32, and the first varactor 333 isconnected in parallel to the shunt acoustic wave resonator 513. Each ofthe first varactor 331, the first varactor 332 and the first varactor333 receives respectively a first active thermal compensating signalfrom the first active adjustment circuit 32, wherein the first activethermal compensating signal is correlated to the first thermalvariation. And the first active thermal compensating signal induces afirst varactor capacitance variation of each of the first varactor 331,the first varactor 332 and the first varactor 333 such that the firstvaractor capacitance variation of each of the first varactor 331, thefirst varactor 332 and the first varactor 333 compensates the impact ofthe first thermal variation to the receiver acoustic wave filter 51 ofthe acoustic wave device 11. The transmitter acoustic wave filter 52comprises a second thermal sensing acoustic wave resonator 501′(12′),fourth acoustic wave resonators 511′, 512′ and 513′, and third acousticwave resonators 502′, 503′ and 504′. The third acoustic wave resonators502′, 503′ and 504′ are series acoustic wave resonators of thetransmitter acoustic wave filter 52. The fourth acoustic wave resonators511′, 512′ and 513′ are shunt acoustic wave resonators of thetransmitter acoustic wave filter 52. In current embodiment, the secondthermal sensing acoustic wave resonator 501′(12′) is a third type of thethermal sensing acoustic wave resonator 12. The second thermal sensingacoustic wave resonator 501′(12′) comprises a first meandered-shapedreflector 413′(which plays a role of thermal sensing), a secondmeandered-shaped reflector 414′(which plays a role of thermal sensing)and two interlocking comb-shaped electrodes 411′, 412′ of aninterdigital transducer 410′. The two meandered-shaped reflectors 413′,414′ are formed respectively at two sides of the two interlockingcomb-shaped electrodes 411′, 412′ of the interdigital transducer 410′.The second thermal sensing acoustic wave resonator 501′(12′) furthercomprises an output terminal 415′ of the first meandered-shapedreflector 413′ and an output terminal 416′ of the secondmeandered-shaped reflector 414′. The second thermal sensing acousticwave resonator 501′(12′) is a thermal sensor and also a series acousticwave resonator of the transmitter acoustic wave filter 52. The secondthermal sensing acoustic wave resonator 501′(12′) plays dual roles ofthermal sensing and acoustic wave filtering. The second thermal sensingacoustic wave resonator 501′(12′) senses a second thermal variationcorrelated to a second resistance variation of the second thermalsensing acoustic wave resonator 501′(12′). The fourth acoustic waveresonators 511′, 512′ and 513′, and the third acoustic wave resonators502′, 503′ and 504′ are surface acoustic wave resonators. The secondthermal sensing acoustic wave resonator 501′(12′) and the three thirdacoustic wave resonators 502′, 503′ and 504′ are connected in series.One terminal of the third acoustic wave resonator 501′ is connected tothe power amplifier 34. One terminal of the third acoustic waveresonator 504′ is connected to the antenna 36. Two terminals of thefourth acoustic wave resonator 511′ are connected respectively to aground and a junction between the second thermal sensing acoustic waveresonator 501′(12′) and the third acoustic wave resonator 502′. Twoterminals of the fourth acoustic wave resonator 512′ are connectedrespectively to the ground and a junction between the third acousticwave resonators 502′ and 503′. Two terminals of the fourth acoustic waveresonator 513′ are connected respectively to the ground and a junctionbetween the third acoustic wave resonators 503′ and 504′. The secondactive adjustment circuit 32′ comprises second input terminals 211, 212,a second conversion circuit 23′, a second bias adjustment circuit 20′and a second output terminal 22′. The second input terminals 211, 212are connected to the second conversion circuit 23′. An output terminalof the second conversion circuit 23′ is connected to an input terminalof the second bias adjustment circuit 20′. The second bias adjustmentcircuit 20′ is connected to the second output terminal 22′. In currentembodiment, the second active adjustment circuit 32′ may be one of theactive adjustment circuits 32′ shown in FIGS. 3E˜3H. The output terminal415′ of the first meandered-shaped reflector 413′ of the second thermalsensing acoustic wave resonator 501′(12′) is connected in parallel tothe second input terminal 211 of the second active adjustment circuit32′. The output terminal 416′ of the second meandered-shaped reflector414′ of the second thermal sensing acoustic wave resonator 501′(12′) isconnected in parallel to the second input terminal 212 of the secondactive adjustment circuit 32′. In current embodiment, the secondvariable reactance device 33′ comprises a second varactor 331′, a secondvaractor 332′ and a second varactor 333′. The second varactor 331′comprises a second varactor input terminal connected to the secondoutput terminal 22′ of the second active adjustment circuit 32′, and thesecond varactor 331′ is connected in parallel to the fourth acousticwave resonator 511′. The second varactor 332′ comprises a secondvaractor input terminal connected to the second output terminal 22′ ofthe second active adjustment circuit 32′, and the second varactor 332′is connected in parallel to the fourth acoustic wave resonator 512′. Thesecond varactor 333′ comprises a second varactor input terminalconnected to the second output terminal 22′ of the second activeadjustment circuit 32′, and the second varactor 333′ is connected inparallel to the fourth acoustic wave resonator 513′. Each of the secondvaractor 331′, the second varactor 332′ and the second varactor 333′receives respectively a second active thermal compensating signal fromthe second active adjustment circuit 32′, wherein the second activethermal compensating signal is correlated to the second thermalvariation. And the second active thermal compensating signal induces asecond varactor capacitance variation of each of the second varactor331′, the second varactor 332′ and the second varactor 333′ such thatthe second varactor capacitance variation of each of the second varactor331′, the second varactor 332′ and the second varactor 333′ compensatesthe impact of the second thermal variation to the transmitter acousticwave filter 52 of the acoustic wave device 11.

Please refer to FIG. 5L, which shows the schematic view of an embodimentof an integrated module of acoustic wave device with active thermalcompensation of the present invention. The main structure of theembodiment of FIG. 5L is basically the same as the structure of theembodiment of FIG. 5K, except that a third acoustic wave resonator 501′does not play a role of thermal sensing, wherein the structure of theintegrated module 3 does not include the second active adjustmentcircuit 32′. One terminal of the third acoustic wave resonator 501′ isconnected to the power amplifier 34. The other terminal of the thirdacoustic wave resonator 501′ is connected to the third acoustic waveresonators 501′. The second varactor 331′ comprises a second varactorinput terminal connected to the first output terminal 22 of the firstactive adjustment circuit 32, and the second varactor 331′ is connectedin parallel to the fourth acoustic wave resonator 511′. The secondvaractor 332′ also comprises a second varactor input terminal connectedto the first output terminal 22 of the first active adjustment circuit32, and the second varactor 332′ is connected in parallel to the fourthacoustic wave resonator 512′. The second varactor 333′ comprises asecond varactor input terminal connected to the first output terminal 22of the first active adjustment circuit 32, and the second varactor 333′is connected in parallel to the fourth acoustic wave resonator 513′.Each of the second varactor 331′, the second varactor 332′ and thesecond varactor 333′ receives respectively the first active thermalcompensating signal from the first active adjustment circuit 32, whereinthe first active thermal compensating signal is correlated to the firstthermal variation. And the first active thermal compensating signalinduces a second varactor capacitance variation of each of the secondvaractor 331′, the second varactor 332′ and the second varactor 333′such that the second varactor capacitance variation of each of thesecond varactor 331′, the second varactor 332′ and the second varactor333′ compensates the impact of the first thermal variation to thetransmitter acoustic wave filter 52 of the acoustic wave device 11.

In the embodiments of FIGS. 5A˜5L, the variable reactance device (forexample, 33 or 33′) comprises at least one varactor (for example, 331,332, 333, 331′, 332′ or 333′). Each varactor (for example, 331, 332,333, 331′, 332′ or 333′) is connected in parallel to one of the shuntacoustic wave resonators (for example, 511, 512, 513, 511′, 512′ or513′) of the acoustic wave filter (for example, 51 or 52 in FIGS. 5I˜5L,or 11 in FIGS. 5A˜5H). In some embodiments, each varactor (for example,331, 332, 333, 331′, 332′ or 333′) is connected in parallel to one ofthe series acoustic wave resonators (for example, 501, 502, 503, 504,501′, 502′, 503′ or 504′) of the acoustic wave filter (for example, 51or 52 in FIGS. 5I˜5L, or 11 in FIGS. 5A˜5H). In some other embodiments,each varactor is connected in parallel to one of the series acousticwave resonators and the shunt acoustic wave resonators of the acousticwave filter. In some embodiments, each of the series acoustic waveresonators and the shunt acoustic wave resonators of the acoustic wavefilter is connected in parallel to one varactor.

As disclosed in the above description and attached drawings, the presentinvention can provide an integrated module of acoustic wave device withactive thermal compensation and an active thermal compensating methodfor an integrated module of acoustic wave device with active thermalcompensation. It is new and can be put into industrial use.

Although the embodiments of the present invention have been described indetail, many modifications and variations may be made by those skilledin the art from the teachings disclosed hereinabove. Therefore, itshould be understood that any modification and variation equivalent tothe spirit of the present invention be regarded to fall into the scopedefined by the appended claims.

What is claimed is:
 1. An integrated module of acoustic wave device withactive thermal compensation comprising: a first substrate; a firstacoustic wave filter, wherein said first acoustic wave filter comprises:a plurality of first acoustic wave resonators formed on said firstsubstrate, wherein each of said plurality of first acoustic waveresonators is a series acoustic wave resonator of said first acousticwave filter; at least one second acoustic wave resonator formed on saidfirst substrate, wherein each of said at least one second acoustic waveresonator is a shunt acoustic wave resonator of said first acoustic wavefilter; and a first thermal sensing acoustic wave resonator for sensinga first thermal variation; a first active adjustment circuit, whereinsaid first thermal sensing acoustic wave resonator is connected to saidfirst active adjustment circuit; and at least one first variablecapacitance device, wherein each of said at least one first variablecapacitance device is connected in parallel to one of said plurality offirst acoustic wave resonators and said at least one second acousticwave resonator of said first acoustic wave filter, wherein each of saidat least one first variable capacitance device is connected to saidfirst active adjustment circuit for receiving a first active thermalcompensating signal, wherein said first active thermal compensatingsignal is correlated to said first thermal variation, wherein said firstactive thermal compensating signal induces a first capacitance variationof each of said at least one first variable capacitance device such thatsaid first capacitance variation of each of said at least one firstvariable capacitance device compensates the impact of said first thermalvariation to said first acoustic wave filter of said acoustic wavedevice.
 2. The integrated module of acoustic wave device with activethermal compensation according to claim 1, wherein said first thermalsensing acoustic wave resonator is formed on said first substrate,wherein said first thermal sensing acoustic wave resonator is one of aseries acoustic wave resonator of said first acoustic wave filter and ashunt acoustic wave resonator of said first acoustic wave filter,thereby said first thermal sensing acoustic wave resonator plays dualroles of thermal sensing and acoustic wave filtering.
 3. The integratedmodule of acoustic wave device with active thermal compensationaccording to claim 2, wherein said plurality of first acoustic waveresonators, said at least one second acoustic wave resonator and saidfirst thermal sensing acoustic wave resonator are surface acoustic waveresonators, wherein said first thermal sensing acoustic wave resonatorcomprises two reflectors and two interlocking comb-shaped electrodes ofan interdigital transducer, wherein said two reflectors and said twointerlocking comb-shaped electrodes of said interdigital transducer areformed on said first substrate, wherein said two reflectors are formedrespectively at two sides of said two interlocking comb-shapedelectrodes of said interdigital transducer, wherein at least one of saidtwo reflectors is a meandered-shaped reflector, wherein said firstthermal variation is correlated to a resistance variation of saidmeandered-shaped reflector.
 4. The integrated module of acoustic wavedevice with active thermal compensation according to claim 2, whereinsaid plurality of first acoustic wave resonators, said at least onesecond acoustic wave resonator and said first thermal sensing acousticwave resonator are bulk acoustic wave resonators or thin film bulkacoustic wave resonators, wherein said first thermal variation iscorrelated to at least one of a capacitance variation and a resonancefrequency variation of said first thermal sensing acoustic waveresonator.
 5. The integrated module of acoustic wave device with activethermal compensation according to claim 4, wherein said first thermalsensing acoustic wave resonator comprises a top electrode, a bottomelectrode and a piezoelectric layer, wherein said bottom electrode isformed on said first substrate, said piezoelectric layer is formed onsaid bottom electrode, said top electrode is formed on saidpiezoelectric layer, wherein the material of said piezoelectric layer isat least one material selected from the group consisting of AlN, quartz,monocrystalline SiO₂, ZnO, HfO₂, barium strontium titanate and leadzirconate titanate.
 6. The integrated module of acoustic wave devicewith active thermal compensation according to claim 2, wherein saidplurality of first acoustic wave resonators, said at least one secondacoustic wave resonator and said first thermal sensing acoustic waveresonator are surface acoustic wave resonators, wherein said firstthermal sensing acoustic wave resonator comprises two interlockingcomb-shaped electrodes of an interdigital transducer, wherein said twointerlocking comb-shaped electrodes of said interdigital transducer isformed on said first substrate, wherein said first thermal variation iscorrelated to at least one of a capacitance variation and a resonancefrequency variation of said first thermal sensing acoustic waveresonator.
 7. The integrated module of acoustic wave device with activethermal compensation according to claim 1, wherein the material of saidfirst substrate is one material selected from the group consisting ofglass, LiTaO₃, LiNbO₃, quartz, Si, GaAs, GaP, sapphire, Al₂O₃, InP, SiC,diamond, GaN and AlN.
 8. The integrated module of acoustic wave devicewith active thermal compensation according to claim 1, wherein saidfirst thermal sensing acoustic wave resonator is formed on said firstsubstrate, wherein said first thermal sensing acoustic wave resonator isone selected from the group consisting of a bulk acoustic waveresonator, a thin film bulk acoustic wave resonator and a surfaceacoustic wave resonator, wherein said first thermal variation iscorrelated to at least one of a capacitance variation and a resonancefrequency variation of said first thermal sensing acoustic waveresonator.
 9. The integrated module of acoustic wave device with activethermal compensation according to claim 8, wherein said first thermalsensing acoustic wave resonator is one selected from the groupconsisting of a bulk acoustic wave resonator and a thin film bulkacoustic wave resonator, wherein said first thermal sensing acousticwave resonator comprises a top electrode, a bottom electrode and apiezoelectric layer, wherein said bottom electrode is formed on saidfirst substrate, said piezoelectric layer is formed on said bottomelectrode, said top electrode is formed on said piezoelectric layer,wherein the material of said piezoelectric layer is at least onematerial selected from the group consisting of AlN, quartz,monocrystalline SiO₂, ZnO, HfO₂, barium strontium titanate and leadzirconate titanate.
 10. The integrated module of acoustic wave devicewith active thermal compensation according to claim 1, wherein saidfirst thermal sensing acoustic wave resonator is formed on a secondsubstrate.
 11. The integrated module of acoustic wave device with activethermal compensation according to claim 10, wherein said first substrateand said second substrate are stacked with each other.
 12. Theintegrated module of acoustic wave device with active thermalcompensation according to claim 10, wherein said first thermal sensingacoustic wave resonator is one selected from the group consisting of abulk acoustic wave resonator and a thin film bulk acoustic waveresonator, wherein said first thermal variation is correlated to atleast one of a capacitance variation and a resonance frequency variationof said first thermal sensing acoustic wave resonator.
 13. Theintegrated module of acoustic wave device with active thermalcompensation according to claim 12, wherein said first thermal sensingacoustic wave resonator comprises a top electrode, a bottom electrodeand a piezoelectric layer, wherein said bottom electrode is formed onsaid second substrate, said piezoelectric layer is formed on said bottomelectrode, said top electrode is formed on said piezoelectric layer,wherein the material of said piezoelectric layer is at least onematerial selected from the group consisting of AlN, quartz,monocrystalline SiO₂, ZnO, HfO₂, barium strontium titanate and leadzirconate titanate.
 14. The integrated module of acoustic wave devicewith active thermal compensation according to claim 10, wherein saidfirst thermal sensing acoustic wave resonator is a surface acoustic waveresonator, wherein said first thermal sensing acoustic wave resonatorcomprises two interlocking comb-shaped electrodes of an interdigitaltransducer, wherein said two interlocking comb-shaped electrodes of saidinterdigital transducer is formed on said second substrate, wherein saidfirst thermal variation is correlated to at least one of a capacitancevariation and a resonance frequency variation of said first thermalsensing acoustic wave resonator.
 15. The integrated module of acousticwave device with active thermal compensation according to claim 10,wherein said plurality of first acoustic wave resonators, said at leastone second acoustic wave resonator and said first thermal sensingacoustic wave resonator are surface acoustic wave resonators, whereinsaid first thermal sensing acoustic wave resonator comprises tworeflectors and two interlocking comb-shaped electrodes of aninterdigital transducer, wherein said two reflectors and said twointerlocking comb-shaped electrodes of said interdigital transducer areformed on said second substrate, wherein said two reflectors are formedrespectively at two sides of said two interlocking comb-shapedelectrodes of said interdigital transducer, wherein at least one of saidtwo reflectors is a meandered-shaped reflector, wherein said firstthermal variation is correlated to a resistance variation of saidmeandered-shaped reflector.
 16. The integrated module of acoustic wavedevice with active thermal compensation according to claim 10, whereinthe material of said second substrate is one material selected from thegroup consisting of glass, LiTaO₃, LiNbO₃, quartz, Si, GaAs, GaP,sapphire, Al₂O₃, InP, SiC, diamond, GaN and AlN.
 17. The integratedmodule of acoustic wave device with active thermal compensationaccording to claim 1, wherein said first active adjustment circuit andsaid at least one first variable capacitance device are formed on acircuit substrate.
 18. The integrated module of acoustic wave devicewith active thermal compensation according to claim 1, furthercomprising a second acoustic wave filter, wherein one of said firstacoustic wave filter and said second acoustic wave filter forms atransmitter acoustic wave filter of an acoustic wave duplexer, while theother forms a receiver acoustic wave filter of said acoustic waveduplexer.
 19. The integrated module of acoustic wave device with activethermal compensation according to claim 18, further comprising a secondactive adjustment circuit and at least one second variable capacitancedevice, wherein said second acoustic wave filter comprises a pluralityof third acoustic wave resonators, at least one fourth acoustic waveresonator and a second thermal sensing acoustic wave resonator, whereinsaid second thermal sensing acoustic wave resonator senses a secondthermal variation, wherein said plurality of third acoustic waveresonators and said at least one fourth acoustic wave resonator areformed on said first substrate, wherein each of said plurality of thirdacoustic wave resonators is a series acoustic wave resonator of saidsecond acoustic wave filter, wherein each of said at least one fourthacoustic wave resonator is a shunt acoustic wave resonator of saidsecond acoustic wave filter, wherein said second thermal sensingacoustic wave resonator is connected to said second active adjustmentcircuit, wherein each of said at least one second variable capacitancedevice is connected in parallel to one of said plurality of thirdacoustic wave resonators and said at least one fourth acoustic waveresonator of said second acoustic wave filter, wherein each of said atleast one second variable capacitance device is connected to said secondactive adjustment circuit for receiving a second active thermalcompensating signal, wherein said second active thermal compensatingsignal is correlated to said second thermal variation, wherein saidsecond active thermal compensating signal induces a second capacitancevariation of each of said at least one second variable capacitancedevice such that said second capacitance variation of each of said atleast one second variable capacitance device compensates the impact ofsaid second thermal variation to said second acoustic wave filter ofsaid acoustic wave device.
 20. The integrated module of acoustic wavedevice with active thermal compensation according to claim 19, whereinsaid second thermal sensing acoustic wave resonator is formed on saidfirst substrate, wherein said second thermal sensing acoustic waveresonator is one of a series acoustic wave resonator of said secondacoustic wave filter and a shunt acoustic wave resonator of said secondacoustic wave filter, thereby said second thermal sensing acoustic waveresonator plays dual roles of thermal sensing and acoustic wavefiltering.
 21. The integrated module of acoustic wave device with activethermal compensation according to claim 19, wherein each of said atleast one second variable capacitance device is a varactor.
 22. Theintegrated module of acoustic wave device with active thermalcompensation according to claim 18, further comprising at least onesecond variable capacitance device, wherein said second acoustic wavefilter comprises a plurality of third acoustic wave resonators and atleast one fourth acoustic wave resonator, wherein said plurality ofthird acoustic wave resonators and said at least one fourth acousticwave resonator are formed on said first substrate, wherein each of saidplurality of third acoustic wave resonators is a series acoustic waveresonator of said second acoustic wave filter, wherein each of said atleast one fourth acoustic wave resonator is a shunt acoustic waveresonator of said second acoustic wave filter, wherein each of said atleast one second variable capacitance device is connected in parallel toone of said plurality of third acoustic wave resonators and said atleast one fourth acoustic wave resonator of said second acoustic wavefilter, wherein each of said at least one second variable capacitancedevice is connected to said first active adjustment circuit forreceiving said first active thermal compensating signal, wherein saidfirst active thermal compensating signal is correlated to said firstthermal variation, wherein said first active thermal compensating signalinduces a second capacitance variation of each of said at least onesecond variable capacitance device such that said second capacitancevariation of each of said at least one second variable capacitancedevice compensates the impact of said first thermal variation to saidsecond acoustic wave filter of said acoustic wave device.
 23. Theintegrated module of acoustic wave device with active thermalcompensation according to claim 22, wherein each of said at least onesecond variable capacitance device is a varactor.
 24. The integratedmodule of acoustic wave device with active thermal compensationaccording to claim 18, further comprising a power amplifier and a lownoise amplifier, wherein said power amplifier is connected to saidtransmitter acoustic wave filter of said acoustic wave duplexer, whilesaid low noise amplifier is connected to said receiver acoustic wavefilter of said acoustic wave duplexer.
 25. The integrated module ofacoustic wave device with active thermal compensation according to claim24, wherein said power amplifier and said low noise amplifier are formedon an amplifier substrate.
 26. The integrated module of acoustic wavedevice with active thermal compensation according to claim 24, whereinsaid power amplifier, said low noise amplifier, said first activeadjustment circuit and said at least one first variable capacitancedevice are formed on a circuit substrate.
 27. The integrated module ofacoustic wave device with active thermal compensation according to claim26, wherein said second active adjustment circuit and said at least onesecond variable capacitance device are formed on said circuit substrate.28. The integrated module of acoustic wave device with active thermalcompensation according to claim 24, wherein said acoustic wave duplexer,said power amplifier, said low noise amplifier, said first activeadjustment circuit and said at least one first variable capacitancedevice are formed on said first substrate.
 29. The integrated module ofacoustic wave device with active thermal compensation according to claim28, wherein said second active adjustment circuit and said at least onesecond variable capacitance device are formed on said first substrate.30. The integrated module of acoustic wave device with active thermalcompensation according to claim 18, further comprising an antenna,wherein said antenna is connected to said acoustic wave duplexer. 31.The integrated module of acoustic wave device with active thermalcompensation according to claim 1, wherein said first acoustic wavefilter, said first active adjustment circuit and said at least one firstvariable capacitance device are formed on said first substrate.
 32. Theintegrated module of acoustic wave device with active thermalcompensation according to claim 1, wherein each of said at least onefirst variable capacitance device is a varactor.
 33. An active thermalcompensating method for an integrated module of acoustic wave devicewith active thermal compensation, wherein said acoustic wave devicecomprises a first acoustic wave filter, wherein said first acoustic wavefilter comprises a plurality of first acoustic wave resonators, at leastone second acoustic wave resonator and a first thermal sensing acousticwave resonator, wherein said plurality of first acoustic wave resonatorsand said at least one second acoustic wave resonator are formed on afirst substrate, wherein each of said plurality of first acoustic waveresonators is a series acoustic wave resonator of said first acousticwave filter, wherein each of said at least one second acoustic waveresonator is a shunt acoustic wave resonator of said first acoustic wavefilter, wherein said active thermal compensating method comprisesfollowing steps of: sensing a first thermal variation by said firstthermal sensing acoustic wave resonator; and outputting a first activethermal compensating signal to at least one first variable capacitancedevice by a first active adjustment circuit, wherein said first thermalsensing acoustic wave resonator is connected to said first activeadjustment circuit, wherein each of said at least one first variablecapacitance device is connected to said first active adjustment circuit,wherein said first active thermal compensating signal is correlated tosaid first thermal variation, wherein each of said at least one firstvariable capacitance device is connected in parallel to one of saidplurality of first acoustic wave resonators and said at least one secondacoustic wave resonator of said first acoustic wave filter, wherein saidfirst active thermal compensating signal induces a first capacitancevariation of each of said at least one first variable capacitance devicesuch that said first capacitance variation of each of said at least onefirst variable capacitance device compensates the impact of said firstthermal variation to said first acoustic wave filter of said acousticwave device.
 34. The active thermal compensating method for anintegrated module of acoustic wave device with active thermalcompensation according to claim 33, wherein said first thermal sensingacoustic wave resonator is formed on said first substrate, wherein saidfirst thermal sensing acoustic wave resonator is one of a seriesacoustic wave resonator of said first acoustic wave filter and a shuntacoustic wave resonator of said first acoustic wave filter, thereby saidfirst thermal sensing acoustic wave resonator plays dual roles ofthermal sensing and acoustic wave filtering.
 35. The active thermalcompensating method for an integrated module of acoustic wave devicewith active thermal compensation according to claim 34, wherein saidplurality of first acoustic wave resonators, said at least one secondacoustic wave resonator and said first thermal sensing acoustic waveresonator are surface acoustic wave resonators, wherein said firstthermal sensing acoustic wave resonator comprises two reflectors and twointerlocking comb-shaped electrodes of an interdigital transducer,wherein said two reflectors and said two interlocking comb-shapedelectrodes of said interdigital transducer are formed on said firstsubstrate, wherein said two reflectors are formed respectively at twosides of said two interlocking comb-shaped electrodes of saidinterdigital transducer, wherein at least one of said two reflectors isa meandered-shaped reflector, wherein said first thermal variation iscorrelated to a resistance variation of said meandered-shaped reflector.36. The active thermal compensating method for an integrated module ofacoustic wave device with active thermal compensation according to claim34, wherein said plurality of first acoustic wave resonators, said atleast one second acoustic wave resonator and said first thermal sensingacoustic wave resonator are bulk acoustic wave resonators or thin filmbulk acoustic wave resonators, wherein said first thermal variation iscorrelated to at least one of a capacitance variation and a resonancefrequency variation of said first thermal sensing acoustic waveresonator.
 37. The active thermal compensating method for an integratedmodule of acoustic wave device with active thermal compensationaccording to claim 36, wherein said first thermal sensing acoustic waveresonator comprises a top electrode, a bottom electrode and apiezoelectric layer, wherein said bottom electrode is formed on saidfirst substrate, said piezoelectric layer is formed on said bottomelectrode, said top electrode is formed on said piezoelectric layer,wherein the material of said piezoelectric layer is at least onematerial selected from the group consisting of AlN, quartz,monocrystalline SiO₂, ZnO, HfO₂, barium strontium titanate and leadzirconate titanate.
 38. The active thermal compensating method for anintegrated module of acoustic wave device with active thermalcompensation according to claim 34, wherein said plurality of firstacoustic wave resonators, said at least one second acoustic waveresonator and said first thermal sensing acoustic wave resonator aresurface acoustic wave resonators, wherein said first thermal sensingacoustic wave resonator comprises two interlocking comb-shapedelectrodes of an interdigital transducer, wherein said two interlockingcomb-shaped electrodes of said interdigital transducer is formed on saidfirst substrate, wherein said first thermal variation is correlated toat least one of a capacitance variation and a resonance frequencyvariation of said first thermal sensing acoustic wave resonator.
 39. Theactive thermal compensating method for an integrated module of acousticwave device with active thermal compensation according to claim 33,wherein the material of said first substrate is one material selectedfrom the group consisting of glass, LiTaO₃, LiNbO₃, quartz, Si, GaAs,GaP, sapphire, Al₂O₃, InP, SiC, diamond, GaN and AlN.
 40. The activethermal compensating method for an integrated module of acoustic wavedevice with active thermal compensation according to claim 33, whereinsaid first thermal sensing acoustic wave resonator is formed on saidfirst substrate, wherein said first thermal sensing acoustic waveresonator is one selected from the group consisting of a bulk acousticwave resonator, a thin film bulk acoustic wave resonator and a surfaceacoustic wave resonator, wherein said first thermal variation iscorrelated to at least one of a capacitance variation and a resonancefrequency variation of said first thermal sensing acoustic waveresonator.
 41. The active thermal compensating method for an integratedmodule of acoustic wave device with active thermal compensationaccording to claim 40, wherein said first thermal sensing acoustic waveresonator is one selected from the group consisting of a bulk acousticwave resonator and a thin film bulk acoustic wave resonator, whereinsaid first thermal sensing acoustic wave resonator comprises a topelectrode, a bottom electrode and a piezoelectric layer, wherein saidbottom electrode is formed on said first substrate, said piezoelectriclayer is formed on said bottom electrode, said top electrode is formedon said piezoelectric layer, wherein the material of said piezoelectriclayer is at least one material selected from the group consisting ofAlN, quartz, monocrystalline SiO₂, ZnO, HfO₂, barium strontium titanateand lead zirconate titanate.
 42. The active thermal compensating methodfor an integrated module of acoustic wave device with active thermalcompensation according to claim 33, wherein said first thermal sensingacoustic wave resonator is formed on a second substrate.
 43. The activethermal compensating method for an integrated module of acoustic wavedevice with active thermal compensation according to claim 42, whereinsaid first substrate and said second substrate are stacked with eachother.
 44. The active thermal compensating method for an integratedmodule of acoustic wave device with active thermal compensationaccording to claim 42, wherein said first thermal sensing acoustic waveresonator is one selected from the group consisting of a bulk acousticwave resonator and a thin film bulk acoustic wave resonator, whereinsaid first thermal variation is correlated to at least one of acapacitance variation and a resonance frequency variation of said firstthermal sensing acoustic wave resonator.
 45. The active thermalcompensating method for an integrated module of acoustic wave devicewith active thermal compensation according to claim 44, wherein saidfirst thermal sensing acoustic wave resonator comprises a top electrode,a bottom electrode and a piezoelectric layer, wherein said bottomelectrode is formed on said second substrate, said piezoelectric layeris formed on said bottom electrode, said top electrode is formed on saidpiezoelectric layer, wherein the material of said piezoelectric layer isat least one material selected from the group consisting of AlN, quartz,monocrystalline SiO₂, ZnO, HfO₂, barium strontium titanate and leadzirconate titanate.
 46. The active thermal compensating method for anintegrated module of acoustic wave device with active thermalcompensation according to claim 42, wherein said first thermal sensingacoustic wave resonator is a surface acoustic wave resonator, whereinsaid first thermal sensing acoustic wave resonator comprises twointerlocking comb-shaped electrodes of an interdigital transducer,wherein said two interlocking comb-shaped electrodes of saidinterdigital transducer is formed on said second substrate, wherein saidfirst thermal variation is correlated to at least one of a capacitancevariation and a resonance frequency variation of said first thermalsensing acoustic wave resonator.
 47. The active thermal compensatingmethod for an integrated module of acoustic wave device with activethermal compensation according to claim 42, wherein said plurality offirst acoustic wave resonators, said at least one second acoustic waveresonator and said first thermal sensing acoustic wave resonator aresurface acoustic wave resonators, wherein said first thermal sensingacoustic wave resonator comprises two reflectors and two interlockingcomb-shaped electrodes of an interdigital transducer, wherein said tworeflectors and said two interlocking comb-shaped electrodes of saidinterdigital transducer are formed on said second substrate, whereinsaid two reflectors are formed respectively at two sides of said twointerlocking comb-shaped electrodes of said interdigital transducer,wherein at least one of said two reflectors is a meandered-shapedreflector, wherein said first thermal variation is correlated to aresistance variation of said meandered-shaped reflector.
 48. The activethermal compensating method for an integrated module of acoustic wavedevice with active thermal compensation according to claim 42, whereinthe material of said second substrate is one material selected from thegroup consisting of glass, LiTaO₃, LiNbO₃, quartz, Si, GaAs, GaP,sapphire, Al₂O₃, InP, SiC, diamond, GaN and AlN.
 49. The active thermalcompensating method for an integrated module of acoustic wave devicewith active thermal compensation according to claim 33, wherein saidfirst active adjustment circuit and said at least one first variablecapacitance device are formed on a circuit substrate.
 50. The activethermal compensating method for an integrated module of acoustic wavedevice with active thermal compensation according to claim 33, furthercomprising a second acoustic wave filter, wherein one of said firstacoustic wave filter and said second acoustic wave filter forms atransmitter acoustic wave filter of an acoustic wave duplexer, while theother forms a receiver acoustic wave filter of said acoustic waveduplexer.
 51. The active thermal compensating method for an integratedmodule of acoustic wave device with active thermal compensationaccording to claim 50, further comprising a second active adjustmentcircuit and at least one second variable capacitance device, whereinsaid second acoustic wave filter comprises a plurality of third acousticwave resonators, at least one fourth acoustic wave resonator and asecond thermal sensing acoustic wave resonator, wherein said secondthermal sensing acoustic wave resonator senses a second thermalvariation, wherein said plurality of third acoustic wave resonators andsaid at least one fourth acoustic wave resonator are formed on saidfirst substrate, wherein each of said plurality of third acoustic waveresonators is a series acoustic wave resonator of said second acousticwave filter, wherein each of said at least one fourth acoustic waveresonator is a shunt acoustic wave resonator of said second acousticwave filter, wherein said second thermal sensing acoustic wave resonatoris connected to said second active adjustment circuit, wherein each ofsaid at least one second variable capacitance device is connected inparallel to one of said plurality of third acoustic wave resonators andsaid at least one fourth acoustic wave resonator of said second acousticwave filter, wherein each of said at least one second variablecapacitance device is connected to said second active adjustment circuitfor receiving a second active thermal compensating signal, wherein saidsecond active thermal compensating signal is correlated to said secondthermal variation, wherein said second active thermal compensatingsignal induces a second capacitance variation of each of said at leastone second variable capacitance device such that said second capacitancevariation of each of said at least one second variable capacitancedevice compensates the impact of said second thermal variation to saidsecond acoustic wave filter of said acoustic wave device.
 52. The activethermal compensating method for an integrated module of acoustic wavedevice with active thermal compensation according to claim 51, whereinsaid second thermal sensing acoustic wave resonator is formed on saidfirst substrate, wherein said second thermal sensing acoustic waveresonator is one of a series acoustic wave resonator of said secondacoustic wave filter and a shunt acoustic wave resonator of said secondacoustic wave filter, thereby said second thermal sensing acoustic waveresonator plays dual roles of thermal sensing and acoustic wavefiltering.
 53. The active thermal compensating method for an integratedmodule of acoustic wave device with active thermal compensationaccording to claim 51, wherein each of said at least one second variablecapacitance device is a varactor.
 54. The active thermal compensatingmethod for an integrated module of acoustic wave device with activethermal compensation according to claim 50, further comprising at leastone second variable capacitance device, wherein said second acousticwave filter comprises a plurality of third acoustic wave resonators andat least one fourth acoustic wave resonator, wherein said plurality ofthird acoustic wave resonators and said at least one fourth acousticwave resonator are formed on said first substrate, wherein each of saidplurality of third acoustic wave resonators is a series acoustic waveresonator of said second acoustic wave filter, wherein each of said atleast one fourth acoustic wave resonator is a shunt acoustic waveresonator of said second acoustic wave filter, wherein each of said atleast one second variable capacitance device is connected in parallel toone of said plurality of third acoustic wave resonators and said atleast one fourth acoustic wave resonator of said second acoustic wavefilter, wherein each of said at least one second variable capacitancedevice is connected to said first active adjustment circuit forreceiving said first active thermal compensating signal, wherein saidfirst active thermal compensating signal is correlated to said firstthermal variation, wherein said first active thermal compensating signalinduces a second capacitance variation of each of said at least onesecond variable capacitance device such that said second capacitancevariation of each of said at least one second variable capacitancedevice compensates the impact of said first thermal variation to saidsecond acoustic wave filter of said acoustic wave device.
 55. The activethermal compensating method for an integrated module of acoustic wavedevice with active thermal compensation according to claim 54, whereineach of said at least one second variable capacitance device is avaractor.
 56. The active thermal compensating method for an integratedmodule of acoustic wave device with active thermal compensationaccording to claim 50, further comprising a power amplifier and a lownoise amplifier, wherein said power amplifier is connected to saidtransmitter acoustic wave filter of said acoustic wave duplexer, whilesaid low noise amplifier is connected to said receiver acoustic wavefilter of said acoustic wave duplexer.
 57. The active thermalcompensating method for an integrated module of acoustic wave devicewith active thermal compensation according to claim 56, wherein saidpower amplifier and said low noise amplifier are formed on an amplifiersubstrate.
 58. The active thermal compensating method for an integratedmodule of acoustic wave device with active thermal compensationaccording to claim 56, wherein said power amplifier, said low noiseamplifier, said first active adjustment circuit and said at least onefirst variable capacitance device are formed on a circuit substrate. 59.The active thermal compensating method for an integrated module ofacoustic wave device with active thermal compensation according to claim58, wherein said second active adjustment circuit and said at least onesecond variable capacitance device are formed on said circuit substrate.60. The active thermal compensating method for an integrated module ofacoustic wave device with active thermal compensation according to claim56, wherein said acoustic wave duplexer, said power amplifier, said lownoise amplifier, said first active adjustment circuit and said at leastone first variable capacitance device are formed on said firstsubstrate.
 61. The active thermal compensating method for an integratedmodule of acoustic wave device with active thermal compensationaccording to claim 60, wherein said second active adjustment circuit andsaid at least one second variable capacitance device are formed on saidfirst substrate.
 62. The active thermal compensating method for anintegrated module of acoustic wave device with active thermalcompensation according to claim 50, further comprising an antenna,wherein said antenna is connected to said acoustic wave duplexer. 63.The active thermal compensating method for an integrated module ofacoustic wave device with active thermal compensation according to claim33, wherein said first acoustic wave filter, said first activeadjustment circuit and said at least one first variable capacitancedevice are formed on said first substrate.
 64. The active thermalcompensating method for an integrated module of acoustic wave devicewith active thermal compensation according to claim 33, wherein each ofsaid at least one first variable capacitance device is a varactor.